公开(公告)号：US09300887B2

公开(公告)日：2016-03-29

申请号：US14256106

申请日：2014-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwi-Deok Lee ,  Kyung-Ho Lee ,  Hiroshige Goto ,  Sae-Young Kim ,  Sang-Chul Sul ,  Myung-Won Lee

IPC: H04N5/355

CPC classification number: H04N5/3559 ,  H04N5/35509

Abstract: An image sensor includes a photoelectric conversion unit, a signal generation unit, and a feedback unit. The photoelectric conversion unit is formed above a substrate and detects incident light to generate photo-charges based on a drive voltage. The signal generation unit is formed on the substrate and generates an analog signal based on the photo-charges. The feedback unit generates the drive voltage based on an amount of the photo-charges generated from the photoelectric conversion unit. The image sensor may perform a wide dynamic range (WDR) function.

Abstract translation: 图像传感器包括光电转换单元，信号生成单元和反馈单元。 光电转换单元形成在基板上方，并根据驱动电压检测入射光以产生光电荷。 信号生成单元形成在基板上，并且基于光电荷产生模拟信号。 反馈单元基于从光电转换单元生成的光电荷的量来产生驱动电压。 图像传感器可以执行宽动态范围（WDR）功能。

公开(公告)号：US20140313383A1

公开(公告)日：2014-10-23

申请号：US14256106

申请日：2014-04-18

Applicant: Samsung Electronics Co, Ltd.

Inventor： Gwi-Deok Lee ,  Kyung-Ho Lee ,  Hiroshige Goto ,  Sae-Young Kim ,  Sang-Chul Sul ,  Myung-Won Lee

IPC: H04N5/335

CPC classification number: H04N5/3559 ,  H04N5/35509

Abstract: An image sensor includes a photoelectric conversion unit, a signal generation unit, and a feedback unit. The photoelectric conversion unit is formed above a substrate and detects incident light to generate photo-charges based on a drive voltage. The signal generation unit is formed on the substrate and generates an analog signal based on the photo-charges. The feedback unit generates the drive voltage based on an amount of the photo-charges generated from the photoelectric conversion unit. The image sensor may perform a wide dynamic range (WDR) function.

Abstract translation: 图像传感器包括光电转换单元，信号生成单元和反馈单元。 光电转换单元形成在基板上方，并根据驱动电压检测入射光以产生光电荷。 信号生成单元形成在基板上，并且基于光电荷产生模拟信号。 反馈单元基于从光电转换单元生成的光电荷的量来产生驱动电压。 图像传感器可以执行宽动态范围（WDR）功能。

公开(公告)号：US09406714B2

公开(公告)日：2016-08-02

申请号：US14535583

申请日：2014-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Hwan Jung ,  Young-Gu Jin ,  Hiroshige Goto ,  Hee-Woo Park ,  Jung-Hyung Pyo

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14616

Abstract: A unit pixel includes a sensing transistor, a photo diode, and a reset drain region. The sensing transistor includes a reference active region, an output active region, and a gate. The gate is between the reference active region and the output active region to electrically connect the reference active region to the output active region based on a gate voltage. The reference active region and output active region are within a semiconductor substrate. The photo diode is under the gate within the semiconductor substrate. The reset drain region is within the semiconductor substrate and is electrically connected to the photo diode by the gate based on the gate voltage.

Abstract translation: 单位像素包括感测晶体管，光电二极管和复位漏极区域。 感测晶体管包括参考有源区，输出有源区和栅极。 栅极在参考有源区域和输出有源区之间，以基于栅极电压将参考有源区域电连接到输出有源区域。 参考有源区和输出​​有源区在半导体衬底内。 光电二极管在半导体衬底内的栅极下。 复位漏极区域在半导体衬底内，并且基于栅极电压通过栅极电连接到光电二极管。