公开(公告)号：US20220121956A1

公开(公告)日：2022-04-21

申请号：US17245173

申请日：2021-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoonsung BAE ,  Seungho GWAK ,  Kwangrak KIM ,  Seunggun BYOUN ,  Gilwoo SONG ,  Younghoon SHIN ,  Kyungwon YUN ,  Chiyoung LEE ,  Taeyong JO

IPC: G06N3/08 ,  G06N3/04 ,  G06N3/067 ,  H01L21/66

Abstract: A method of manufacturing a semiconductor device includes forming a pattern on a wafer, measuring a spectrum of the pattern on the wafer, with a spectral optical system, performing an analysis of the spectrum through a deep learning model for predicting pattern characteristics, the deep learning model being trained based on a domain knowledge, and evaluating the pattern on the wafer based on the analysis of the spectrum, wherein the domain knowledge includes a noise inducing factor of the spectral optical system.

公开(公告)号：US20250052691A1

公开(公告)日：2025-02-13

申请号：US18394784

申请日：2023-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngsun CHOI ,  Soonyang KWON ,  Kwangrak KIM ,  Jangryul PARK ,  Jiwoong KIM ,  Youngjun LEE

IPC: G01N21/956 ,  G01J3/02 ,  G01J3/06 ,  G01J3/45 ,  H01L21/66

Abstract: A method of manufacturing a semiconductor device using a semiconductor measurement apparatus includes extracting an interference pattern using a microsphere, and measuring a distance between a specimen and the microsphere, based on the interference pattern. A semiconductor measurement apparatus includes a light source configured to output at least one light, a scanner having a microsphere-objective lens, the scanner configured to allow the at least one light to be incident on a specimen, a spectrometer configured to obtain a spectrum of light reflected from the specimen; and a distance measurement apparatus configured to calculate a microsphere-to-specimen distance by analyzing a change in the spectrum.

公开(公告)号：US20240112881A1

公开(公告)日：2024-04-04

申请号：US18196499

申请日：2023-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghyeok PARK ,  Kwangrak KIM ,  Jiwoong KIM ,  Hyenok PARK ,  Jeonghyeon WANG ,  Myungjun LEE ,  Yunje CHO ,  Junghee CHO ,  Yun HWANG

IPC: H01J37/28 ,  G01B11/22 ,  H01J37/20 ,  H01J37/304 ,  H01J37/305

CPC classification number: H01J37/28 ,  G01B11/22 ,  H01J37/20 ,  H01J37/304 ,  H01J37/305 ,  H01J37/1472 ,  H01J2237/24578

Abstract: A substrate analysis system includes a load-lock module configured to load or unload a substrate on which a pattern layer is formed; a milling module configured to form a milling surface from which at least a portion of the pattern layer is removed; a depth measuring module configured to measure a milling depth of an analysis region formed on the milling surface; an imaging module configured to capture a two-dimensional image of the analysis region; and a control module controlling the substrate to circulate through the milling module, the depth measuring module, and the imaging module, when the milling depth is shallower than a set target depth, wherein the milling module adjusts a path of the ion beam so that the ion beam moves horizontally in the milling region according to a scanning profile received based on an intensity map of the ion beam.