公开(公告)号：US20240420961A1

公开(公告)日：2024-12-19

申请号：US18439271

申请日：2024-02-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghoon CHOI ,  Seongsoo Kim ,  Hoyoung Kim ,  Yeongbong Park ,  Kiho Bae

IPC: H01L21/3105 ,  H01L21/3115 ,  H01L21/768 ,  H01L23/528 ,  H01L29/40

Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric film on a front-side surface of a substrate that has the front-side surface and a back-side surface, doping a surface of the first dielectric film with impurities to form a doped dielectric film covering at least a portion of the first dielectric film, forming a second dielectric film on the doped dielectric film, and polishing the second dielectric film by a chemical mechanical polishing (CMP) method. The doped dielectric film has a polishing rate less than a polishing rate of each of the first dielectric film and the second dielectric film.

公开(公告)号：US20230201887A1

公开(公告)日：2023-06-29

申请号：US17947242

申请日：2022-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunjin Kim ,  Kiho Bae ,  Boun Yoon ,  Ilyoung Yoon

IPC: B08B3/12 ,  B08B1/04 ,  B08B3/08

CPC classification number: B08B3/12 ,  B08B1/04 ,  B08B3/08

Abstract: A substrate cleaning device, includes: a substrate cleaning module including first and second roll members adjacent to lower and upper surfaces of a substrate, respectively, first and second driving units configured to move the first and second roll members, a first roll cleaning module including a roll receiving region, a first cleaning solution supply unit supplying a first cleaning solution, and an ultrasonic generating unit applying ultrasonic vibrations; a second roll cleaning module including a housing, a brush pad in the housing, and a second cleaning solution supply unit supplying a second cleaning solution; and a control unit controlling the first driving unit so that the first roll member contacts the substrate lower surface or is accommodated in the roll receiving region, and to control the second driving unit so that the second roll member contacts the substrate upper surface or is seated on the brush pad.

公开(公告)号：US20250022713A1

公开(公告)日：2025-01-16

申请号：US18633627

申请日：2024-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joongsuk Oh ,  Jinuk Byun ,  Hoyoung Kim ,  Hyunkyu Moon ,  Kiho Bae ,  Boun Yoon ,  Hojoon Lee ,  Seunghoon Choi

IPC: H01L21/304 ,  G06N3/04 ,  H01L21/66 ,  H01L21/67

Abstract: An offset data correction method includes measuring a measurement target that has undergone a chemical mechanical polishing (CMP) process, generating an offset correction model based on the measurement of the measurement target, and using the offset correction model, correcting measured data obtained from the measurement of the measurement target, wherein the offset correction model is trained by using the measured data and layout data of the measurement target as inputs.

公开(公告)号：US20240051079A1

公开(公告)日：2024-02-15

申请号：US18296021

申请日：2023-04-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunkyoung Kim ,  Kiho Bae ,  Hoyoung Kim ,  Boumyoung Park ,  Boun Yoon

IPC: B24B37/005 ,  G05D11/13

CPC classification number: B24B37/0056 ,  G05D11/138 ,  H01L21/31053

Abstract: A chemical mechanical polishing apparatus includes: supply pipes to which a slurry stock solution and a diluent are supplied; flow rate control units, respectively disposed on the supply pipes to control flow rates of the slurry stock solution and the diluent; a mixer connected to the flow rate control units and configured to mix the slurry stock solution and the diluent, supplied from the supply pipes, to prepare a slurry; a slurry storage unit connected to the mixer and configured to store the slurry prepared in the mixer; a slurry supply unit configured to draw out the slurry stored in the slurry storage unit and to supply the slurry to a polishing pad; and a control unit configured to control the flow rate control units to control a mixing ratio of the slurry stock solution and the diluent and a flow rate of the slurry to the polishing pad.

公开(公告)号：US11757015B2

公开(公告)日：2023-09-12

申请号：US17196321

申请日：2021-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghoon Choi ,  Ilyoung Yoon ,  Ilsu Park ,  Kiho Bae ,  Boun Yoon ,  Yooyong Lee

IPC: H01L29/423 ,  H01L29/49 ,  H01L21/8234

CPC classification number: H01L29/4966 ,  H01L21/823443 ,  H01L21/823475 ,  H01L29/42372

Abstract: A semiconductor device including a substrate; a gate structure on the substrate; a gate spacer on a sidewall of the gate structure; and a polishing stop pattern on the gate structure and the gate spacer, the polishing stop pattern including a first portion covering an upper surface of the gate structure and an upper surface of the gate spacer; and a second portion extending from the first portion in a vertical direction substantially perpendicular to an upper surface of the substrate, wherein an upper surface of a central portion of the first portion of the polishing stop pattern is higher than an upper surface of an edge portion of the first portion thereof, and the upper surface of the central portion of the first portion of the polishing stop pattern is substantially coplanar with an upper surface of the second portion thereof.