公开(公告)号：US20170221769A1

公开(公告)日：2017-08-03

申请号：US15292790

申请日：2016-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： GI GWAN PARK ,  Jung Gun YOU ,  Ki ll KIM ,  Sug Hyun SUNG ,  Myung Yoon UM

IPC: H01L21/8238 ,  H01L21/02 ,  H01L29/06 ,  H01L29/66 ,  H01L21/311 ,  H01L27/092 ,  H01L21/762 ,  H01L21/308

CPC classification number: H01L21/823821 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823828 ,  H01L21/823878 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: A method of manufacturing a semiconductor device includes forming a first fin-type pattern and a second fin-type pattern which are separated by a first trench between facing ends thereof, forming a first insulating layer filling the first trench, removing a portion of the first insulating layer to form a second trench on the first insulating layer, and forming a third trench by enlarging a width of the second trench.