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    Image sensor and fabricating method thereof
    1.
    发明授权
    Image sensor and fabricating method thereof 有权
    图像传感器及其制造方法

    公开(公告)号：US09263495B2

    公开(公告)日：2016-02-16

    申请号：US14554511

    申请日：2014-11-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sungkwan Kim ,  Soo-Kyung Kim ,  Jung-kuk Park ,  Myung-Sun Kim ,  Jaesung Yun ,  Junetaeg Lee ,  Hakyu Choi

    IPC: H01L21/00 ,  H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

    Abstract: A method of fabricating an image sensor is provided. The method may include preparing a substrate with first to third pixel regions, coating a first color filter layer on the substrate, sequentially forming a first sacrificial layer and a first protection layer to cover the first color filter layer, forming a first photoresist pattern on the first protection layer to be overlapped with the first pixel region, performing a first dry etching process using the first photoresist pattern as an etch mask to the first sacrificial layer and the first protection layer to form a first color filter, a first sacrificial pattern, and a first protection pattern sequentially stacked on the first pixel region, and selectively removing the first sacrificial pattern to separate the first protection pattern from the first color filter.

    Abstract translation: 提供了一种制造图像传感器的方法。 该方法可以包括制备具有第一至第三像素区域的衬底，在衬底上涂覆第一滤色器层，顺序地形成第一牺牲层和第一保护层以覆盖第一滤色器层，在第一滤色器层上形成第一光致抗蚀剂图案 第一保护层与第一像素区域重叠，执行使用第一光致抗蚀剂图案作为第一牺牲层和第一保护层的蚀刻掩模的第一干蚀刻工艺以形成第一滤色器，第一牺牲图案和 第一保护图案，其顺序地堆叠在第一像素区域上，并且选择性地去除第一牺牲图案以将第一保护图案与第一滤色器分离。

    Semiconductor devices and image sensors
    2.
    发明授权
    Semiconductor devices and image sensors 有权

    公开(公告)号：US10121808B1

    公开(公告)日：2018-11-06

    申请号：US15840635

    申请日：2017-12-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dongmin Han ,  Jung-Saeng Kim ,  Seungjoo Nah ,  Junetaeg Lee

    IPC: H01L27/14 ,  H01L31/0232 ,  H01L27/146 ,  H04N5/374

    Abstract: A device includes first patterns, second patterns, and a second sample pattern on a semiconductor substrate. The second patterns are horizontally spaced apart at an equal interval from the second sample pattern. The second sample pattern includes first and second sidewall facing each other, a first point on the first sidewall, and a second point on the second sidewall. The second sample pattern and the most adjacent first pattern in relation to the second sample pattern are spaced apart from each other at a first horizontal distance in a direction parallel to a line connecting the first point and the second point. The first horizontal distance is greater than a second horizontal distance in the direction between one second pattern of the second patterns and a most adjacent first pattern in relation to the one second pattern.

    IMAGE SENSOR AND FABRICATING METHOD THEREOF
    3.
    发明申请
    IMAGE SENSOR AND FABRICATING METHOD THEREOF 有权
    图像传感器及其制作方法

    公开(公告)号：US20150145088A1

    公开(公告)日：2015-05-28

    申请号：US14554511

    申请日：2014-11-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sungkwan Kim ,  Soo-Kyung Kim ,  Jung-kuk Park ,  Myung-Sun Kim ,  Jaesung Yun ,  Junetaeg Lee ,  Hakyu Choi

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

    Abstract: A method of fabricating an image sensor is provided. The method may include preparing a substrate with first to third pixel regions, coating a first color filter layer on the substrate, sequentially forming a first sacrificial layer and a first protection layer to cover the first color filter layer, forming a first photoresist pattern on the first protection layer to be overlapped with the first pixel region, performing a first dry etching process using the first photoresist pattern as an etch mask to the first sacrificial layer and the first protection layer to form a first color filter, a first sacrificial pattern, and a first protection pattern sequentially stacked on the first pixel region, and selectively removing the first sacrificial pattern to separate the first protection pattern from the first color filter.

    Abstract translation: 提供了一种制造图像传感器的方法。 该方法可以包括制备具有第一至第三像素区域的衬底，在衬底上涂覆第一滤色器层，顺序地形成第一牺牲层和第一保护层以覆盖第一滤色器层，在第一滤色器层上形成第一光致抗蚀剂图案 第一保护层与第一像素区域重叠，执行使用第一光致抗蚀剂图案作为第一牺牲层和第一保护层的蚀刻掩模的第一干蚀刻工艺以形成第一滤色器，第一牺牲图案和 第一保护图案，其顺序地堆叠在第一像素区域上，并且选择性地去除第一牺牲图案以将第一保护图案与第一滤色器分离。

    Complementary metal-oxide semiconductor (CMOS) image sensor
    4.
    发明授权
    Complementary metal-oxide semiconductor (CMOS) image sensor 有权

    公开(公告)号：US12068350B2

    公开(公告)日：2024-08-20

    申请号：US17382777

    申请日：2021-07-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seokha Lee ,  Junetaeg Lee

    IPC: H01L27/146 ,  H01L25/065

    CPC classification number: H01L27/14636 ,  H01L27/14634 ,  H01L25/0657 ,  H01L27/1463

    Abstract: Provided is an image sensor including a sensor chip including a first substrate and a first interconnection layer, a logic chip including a second substrate and a second interconnection layer, a through-hole penetrating a portion of the second interconnection layer, the first substrate, and the first interconnection layer, and a first connection structure disposed on an inner surface of the through-hole and extending from the first substrate toward the second interconnection layer, wherein the first interconnection layer includes a first interlayer insulating layer and a first interconnection pattern, the second interconnection layer includes a second interlayer insulating layer and a second interconnection pattern, the through-hole includes first and second trenches respectively extending from the through-hole toward the second interconnection layer, bottom surfaces of the first and second trenches contact the second interconnection pattern, and a bottom surface of the through-hole contacts the first interconnection pattern.

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