公开(公告)号：US10121808B1

公开(公告)日：2018-11-06

申请号：US15840635

申请日：2017-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongmin Han ,  Jung-Saeng Kim ,  Seungjoo Nah ,  Junetaeg Lee

IPC: H01L27/14 ,  H01L31/0232 ,  H01L27/146 ,  H04N5/374

Abstract: A device includes first patterns, second patterns, and a second sample pattern on a semiconductor substrate. The second patterns are horizontally spaced apart at an equal interval from the second sample pattern. The second sample pattern includes first and second sidewall facing each other, a first point on the first sidewall, and a second point on the second sidewall. The second sample pattern and the most adjacent first pattern in relation to the second sample pattern are spaced apart from each other at a first horizontal distance in a direction parallel to a line connecting the first point and the second point. The first horizontal distance is greater than a second horizontal distance in the direction between one second pattern of the second patterns and a most adjacent first pattern in relation to the one second pattern.

公开(公告)号：US12302655B2

公开(公告)日：2025-05-13

申请号：US17657010

申请日：2022-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongmin Han ,  Wonhyeok Kim ,  Seongjoo Nah ,  Heegeun Jeong

IPC: H01L27/146 ,  H10F39/00 ,  H10F39/18

Abstract: An image sensor includes a dual vertical gate. The dual vertical gate includes two vertical extension portions that are spaced apart from each other in a first direction and vertically extend in a second direction perpendicular to the first direction into a substrate, and a connection portion that connects the two vertical extension portions to each other. An element isolation layer is disposed adjacent to a side surface of the vertical extension portion in the first direction. The two vertical extension portions are separated by a separation area that extends in the second direction, and a top surface of the separation area is lower than a top surface of the element isolation layer.