IMAGE SENSORS HAVING HIGH DENSITY SUBPIXELS THEREIN WITH ENHANCED PIXEL SEPARATION STRUCTURES

    公开(公告)号:US20240290808A1

    公开(公告)日:2024-08-29

    申请号:US18517562

    申请日:2023-11-22

    CPC classification number: H01L27/1463 H01L27/1464 H01L27/14685 H01L27/14641

    Abstract: An image sensor is provided, and the image sensor includes: a substrate having first and second surfaces spaced apart from each other in a vertical direction; a first color unit pixel including a first subpixel to a fourth subpixel arranged in a 2×2 matrix; a second color unit pixel including four subpixels arranged in a 2×2 matrix; a first pixel isolation trench separating the first color unit pixel and the second color unit pixel; a second pixel isolation trench separating the first subpixel and the second subpixel of the first color unit pixel; a third pixel isolation trench on a point of intersection of the first to fourth subpixels of the first color unit pixel. The first color unit pixel detects first color light. The second color unit pixel detects second color light. The image sensor is configured to receive the first color light on the second surface. The second pixel isolation trench extends from the first surface to the second surface. The third pixel isolation trench extends from the second surface to the first surface.

    Dual vertical gate and image sensor including the same

    公开(公告)号:US12302655B2

    公开(公告)日:2025-05-13

    申请号:US17657010

    申请日:2022-03-29

    Abstract: An image sensor includes a dual vertical gate. The dual vertical gate includes two vertical extension portions that are spaced apart from each other in a first direction and vertically extend in a second direction perpendicular to the first direction into a substrate, and a connection portion that connects the two vertical extension portions to each other. An element isolation layer is disposed adjacent to a side surface of the vertical extension portion in the first direction. The two vertical extension portions are separated by a separation area that extends in the second direction, and a top surface of the separation area is lower than a top surface of the element isolation layer.

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