公开(公告)号：US12068350B2

公开(公告)日：2024-08-20

申请号：US17382777

申请日：2021-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seokha Lee ,  Junetaeg Lee

IPC: H01L27/146 ,  H01L25/065

CPC classification number: H01L27/14636 ,  H01L27/14634 ,  H01L25/0657 ,  H01L27/1463

Abstract: Provided is an image sensor including a sensor chip including a first substrate and a first interconnection layer, a logic chip including a second substrate and a second interconnection layer, a through-hole penetrating a portion of the second interconnection layer, the first substrate, and the first interconnection layer, and a first connection structure disposed on an inner surface of the through-hole and extending from the first substrate toward the second interconnection layer, wherein the first interconnection layer includes a first interlayer insulating layer and a first interconnection pattern, the second interconnection layer includes a second interlayer insulating layer and a second interconnection pattern, the through-hole includes first and second trenches respectively extending from the through-hole toward the second interconnection layer, bottom surfaces of the first and second trenches contact the second interconnection pattern, and a bottom surface of the through-hole contacts the first interconnection pattern.

公开(公告)号：US10050078B2

公开(公告)日：2018-08-14

申请号：US15798387

申请日：2017-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggu Jin ,  Changrok Moon ,  Duckhyung Lee ,  Seokha Lee

IPC: H01L27/146 ,  G02B27/10

CPC classification number: H01L27/14649 ,  G02B27/10 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14685

Abstract: A first substrate includes a plurality of unit pixel regions. A deep trench isolation structure is disposed in the first substrate and isolates each of the plurality of the unit pixel regions from each other. Each of a plurality of photoelectric converters is disposed in one of the plurality of unit pixel regions. A plurality of micro lenses are disposed on the first substrate. A plurality of light splitters are disposed on the first substrate. Each of the plurality of light splitters is disposed between one of the plurality of micro lenses and one of the plurality of photoelectric converters. Each of a plurality of photoelectric-conversion-enhancing layers is disposed between one of the plurality of light splitters and one of the plurality of photoelectric converters.

公开(公告)号：US10008535B2

公开(公告)日：2018-06-26

申请号：US15090883

申请日：2016-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seokha Lee ,  Kyungah Jeon ,  Yunki Lee

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14689

Abstract: An image sensor includes a substrate including a plurality of photoelectric conversion parts and a pixel isolation trench extending from a surface of the substrate between the photoelectric conversion parts, a first fixed charge film directly on the surface of the substrate, a second fixed charge film directly on the first fixed charge film and an inner wall of the pixel isolation trench, and an insulating layer directly on the second fixed charge film, the insulating layer configured to fill the pixel isolation trench.

公开(公告)号：US09508766B2

公开(公告)日：2016-11-29

申请号：US14813182

申请日：2015-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： HyunPil Noh ,  Dong-Chul Lee ,  Seokha Lee ,  Chan Park ,  Seungho Shin

IPC: H01L27/00 ,  H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14689

Abstract: An image sensor includes a photoelectric conversion element in a substrate, a first storage region spaced apart from the photoelectric conversion element in the substrate, a gate on the first storage region, a light shielding layer covering the gate, a dielectric layer disposed between the gate and the light shielding layer and extending onto a top surface of the substrate, an interlayer insulating structure covering the light shielding layer, and a micro-lens overlapping with the photoelectric conversion element on the interlayer insulating structure. The light shielding layer includes a first portion covering a sidewall of the gate, and a second portion on a top surface of the gate. The first portion has a first thickness corresponding to a vertical height from a bottom surface of the first portion to a top surface of the first portion, and the first thickness is greater than a second thickness of the second portion.

Abstract translation: 图像传感器包括基板中的光电转换元件，与基板中的光电转换元件间隔开的第一存储区域，第一存储区域上的栅极，覆盖栅极的遮光层，设置在栅极之间的介电层 并且遮光层延伸到基板的顶表面，覆盖遮光层的层间绝缘结构和与层间绝缘结构上的光电转换元件重叠的微透镜。 遮光层包括覆盖栅极侧壁的第一部分和栅极顶表面上的第二部分。 第一部分具有对应于从第一部分的底表面到第一部分的顶表面的垂直高度的第一厚度，并且第一厚度大于第二部分的第二厚度。