公开(公告)号：US20140264298A1

公开(公告)日：2014-09-18

申请号：US14206229

申请日：2014-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonje Park

IPC: H01L51/44

CPC classification number: H01L51/44 ,  H01L27/28 ,  H01L31/02162 ,  H01L51/42 ,  Y02E10/549

Abstract: An image sensor is provided. The image sensor includes an interlayered dielectric structure having a first recess region, in which an organic photoelectric layer is provided, and a second recess region, in which a color filter is provided. The second recess region may be provided under the first recess region.

Abstract translation: 提供图像传感器。 图像传感器包括具有设置有机光电层的第一凹部区域和设置有滤色器的第二凹部区域的层间电介质结构体。 第二凹部区域可以设置在第一凹部区域的下方。

公开(公告)号：US20170092687A1

公开(公告)日：2017-03-30

申请号：US15372999

申请日：2016-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： JeongWook Ko ,  Hongki Kim ,  Younghoon Park ,  Wonje Park ,  Yu Jin Ahn ,  Junetaeg Lee

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374

CPC classification number: H01L27/14685 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14687 ,  H04N5/374 ,  H04N5/378

Abstract: Example embodiments disclose an image sensor and a fabricating method thereof. An image sensor may include a semiconductor layer with a light-receiving region and a light-blocking region, the semiconductor layer including photoelectric conversion devices, a light-blocking layer on a surface of the semiconductor layer, color filters on the semiconductor layer and the light-blocking layer, and micro lenses on the color filters. The color filters are absent from an interface region between the light-receiving region and the light-blocking region.

公开(公告)号：US09559140B2

公开(公告)日：2017-01-31

申请号：US14465062

申请日：2014-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： JeongWook Ko ,  Hongki Kim ,  Younghoon Park ,  Wonje Park ,  Yu Jin Ahn ,  Junetaeg Lee

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14687 ,  H04N5/374 ,  H04N5/378

Abstract: Example embodiments disclose an image sensor and a fabricating method thereof. An image sensor may include a semiconductor layer with a light-receiving region and a light-blocking region, the semiconductor layer including photoelectric conversion devices, a light-blocking layer on a surface of the semiconductor layer, color filters on the semiconductor layer and the light-blocking layer, and micro lenses on the color filters. The color filters are absent from an interface region between the light-receiving region and the light-blocking region.

Abstract translation: 示例性实施例公开了图像传感器及其制造方法。 图像传感器可以包括具有光接收区域和遮光区域的半导体层，所述半导体层包括光电转换装置，半导体层表面上的阻光层，半导体层上的滤色器和 遮光层和滤镜上的微透镜。 滤光器不在光接收区域和遮光区域之间的界面区域中。

公开(公告)号：US09130180B2

公开(公告)日：2015-09-08

申请号：US14206229

申请日：2014-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonje Park

IPC: H01L51/44 ,  H01L31/0216 ,  H01L27/28 ,  H01L51/42

CPC classification number: H01L51/44 ,  H01L27/28 ,  H01L31/02162 ,  H01L51/42 ,  Y02E10/549

Abstract: An image sensor is provided. The image sensor includes an interlayered dielectric structure having a first recess region, in which an organic photoelectric layer is provided, and a second recess region, in which a color filter is provided. The second recess region may be provided under the first recess region.

Abstract translation: 提供图像传感器。 图像传感器包括具有设置有机光电层的第一凹部区域和设置有滤色器的第二凹部区域的层间电介质结构体。 第二凹部区域可以设置在第一凹部区域的下方。