公开(公告)号：US20170278745A1

公开(公告)日：2017-09-28

申请号：US15621618

申请日：2017-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Su Kim ,  Dong-Woon Park ,  Tae-Hoi Park ,  Yong-Kug Bae ,  Tae-Hwan Oh ,  Chang-Hoon Lee ,  Boo-Hyun Ham

IPC: H01L21/768 ,  H01L27/02 ,  G03F7/20 ,  H01L21/8234

CPC classification number: H01L21/76816 ,  G03F7/70633 ,  G03F7/70683 ,  H01L21/28518 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76897 ,  H01L21/823437 ,  H01L21/823475 ,  H01L27/0207

Abstract: In a method of fabricating a semiconductor device, a substrate including a circuit area and an overlay mark area is provided. Conductive gate patterns are formed on the substrate in the circuit area such that the overlay mark area is free of the gate patterns, and conductive contact patterns are formed on the substrate between the gate patterns in the circuit area. A mirror pattern is formed on the substrate in the overlay mark area, where the mirror pattern and the contact patterns comprising a same reflective material. Related semiconductor devices, overlay marks, and fabrication methods are also discussed.

公开(公告)号：US20190113838A1

公开(公告)日：2019-04-18

申请号：US15938434

申请日：2018-03-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Seok Jung ,  Sung-Hoon Park ,  Jong-Su Kim ,  Suk-Jong Bae

IPC: G03F1/36

Abstract: A method of designing a layout of a photomask and a method of manufacturing a photomask, the method of designing a layout of a photomask including obtaining a design layout of a mask pattern; performing an optical proximity correction on the design layout to obtain design data; obtaining data of a position error of a pattern occurring during an exposure of the photomask according to the design data; correcting position data of the pattern based on the position error data to correct the design data; and providing the corrected position data to an exposure device to expose an exposure beam according to the corrected design data.

公开(公告)号：US09812364B2

公开(公告)日：2017-11-07

申请号：US15184315

申请日：2016-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Su Kim

IPC: H01L21/8234 ,  H01L21/02 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3105 ,  H01L23/544

CPC classification number: H01L21/823431 ,  H01L21/02532 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31051 ,  H01L21/31111 ,  H01L21/32139 ,  H01L21/823437 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453

Abstract: The disclosure relates to methods of fabricating semiconductor devices. A method of fabricating a semiconductor device is provided as follows. A target layer is formed. A hard mask layer is formed on the target layer. The hard mask layer is patterned to form an overlay mask pattern including a first mask pattern and a plateau-shaped mask pattern. The first mask pattern encloses the plateau-shaped mask pattern. The first mask pattern is spaced apart from the plateau-shaped mask pattern. The target layer is patterned using the overlay mask pattern to form a redundant fin and a plateau-shaped overlay mark. The redundant fin is removed.

公开(公告)号：US10852636B2

公开(公告)日：2020-12-01

申请号：US15938434

申请日：2018-03-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Seok Jung ,  Sung-Hoon Park ,  Jong-Su Kim ,  Suk-Jong Bae

IPC: G03F1/36 ,  G06F30/398

Abstract: A method of designing a layout of a photomask and a method of manufacturing a photomask, the method of designing a layout of a photomask including obtaining a design layout of a mask pattern; performing an optical proximity correction on the design layout to obtain design data; obtaining data of a position error of a pattern occurring during an exposure of the photomask according to the design data; correcting position data of the pattern based on the position error data to correct the design data; and providing the corrected position data to an exposure device to expose an exposure beam according to the corrected design data.