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公开(公告)号：US09478702B2
公开(公告)日：2016-10-25
申请号：US14513026
申请日：2014-10-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Won Hwang , Je Won Kim , Il Ho Ahn , Soo Jeong Choi
IPC: H01L33/08 , F21V8/00 , F21V19/00 , F21K99/00 , F21Y101/02 , F21S8/10 , H01L33/00 , H01L33/24 , H01L33/16
CPC classification number: H01L33/08 , F21K9/232 , F21S41/147 , F21S45/43 , F21S45/47 , F21V19/001 , F21Y2101/00 , F21Y2115/10 , G02B6/0073 , H01L33/007 , H01L33/16 , H01L33/24
Abstract: There is provided a semiconductor light emitting device including: a first conductivity-type semiconductor base layer; a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; and a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer.
Abstract translation: 提供一种半导体发光器件，包括：第一导电型半导体基底层; 掩模层，其设置在所述第一导电型半导体基底层上并且包括具有暴露所述第一导电型半导体基底层的多个开口的石墨烯层; 以及设置在所述开口上并且各自包括第一导电型半导体芯，有源层和第二导电型半导体层的多个发光纳米结构。
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公开(公告)号：US20140131759A1
公开(公告)日：2014-05-15
申请号：US14129524
申请日：2011-07-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jae Yoon Kim , Je Won Kim , Jin Bock Lee , Seok Min Hwang , Hae Soo Ha , Su Yeol Lee
IPC: H01L33/38
CPC classification number: H01L33/387 , H01L33/20 , H01L33/382 , H01L2933/0016
Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer formed in a first region corresponding to a partial region of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region different from the first region on the upper surface of the n-type semiconductor layer, and having an n-type pad and first and second n-type fingers, and a p-type electrode formed on the p-type semiconductor layer, and having a p-type pad and a p-type finger, wherein the n-type semiconductor layer, the active layer, and the p-type semiconductor layer form a light emitting structure, and a region in which the n-type and p-type fingers intersect to overlap with each other is formed.
Abstract translation: 半导体发光器件包括形成在对应于n型半导体层的上表面的部分区域的第一区域中的n型半导体层，有源层和p型半导体层，n型电极 形成在与n型半导体层的上表面上的第一区域不同的第二区域中，并且具有n型焊盘和第一和第n型指状物以及形成在p型上的p型电极 半导体层，并且具有p型焊盘和p型指状物，其中所述n型半导体层，所述有源层和所述p型半导体层形成发光结构，以及其中所述n型半导体层， 形成彼此重叠的类型和p型手指。
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Patent Agency Ranking
公开(公告)号：US20140070252A1
公开(公告)日：2014-03-13
申请号：US14015095
申请日：2013-08-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： JIN BOCK LEE , Ki Seok Kim , Je Won Kim , Ju-Bin Seo , Seong-Seok Yang , Sang Seok Lee , Joon Sub Lee
IPC: H01L33/36
Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.
Abstract translation: 半导体发光器件包括依次层叠在基板上的第一导电型半导体层，有源层和第二导电型半导体层。 第一电极设置在第一导电型半导体层的一部分上。 电流扩散层设置在第二导电型半导体层上，并且包括露出第二导电型半导体层的一部分的开口。 第二电极覆盖电流扩散层的一部分和第二导电型半导体层的暴露部分，其中电流扩散层的部分靠近开口。
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公开(公告)号：US09911381B2
公开(公告)日：2018-03-06
申请号：US14825670
申请日：2015-08-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam Goo Cha , Young Soo Park , Sung Hyun Sim , Je Won Kim
IPC: G09G3/32 , G09G3/3233 , H01L27/15
CPC classification number: G09G3/3233 , G09G2300/0426 , G09G2300/0452 , G09G2300/0852 , G09G2310/0297 , H01L27/156
Abstract: There is provided a display device including a plurality of pixels. Each of the plurality of pixels may include a plurality of switching devices, at least one capacitor, and a semiconductor light-emitting device. The display device may further include a driving circuit configured to apply currents to the semiconductor light-emitting device through the plurality of switching devices and at least one capacitor. The semiconductor light-emitting device may emit red light, green light, and blue light through the currents applied by the driving circuit.
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公开(公告)号：US09601665B2
公开(公告)日：2017-03-21
申请号：US14828004
申请日：2015-08-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Hyun Sim , Geon Wook Yoo , Mi Hyun Kim , Dong Hoon Lee , Jin Bock Lee , Je Won Kim , Hye Seok Noh , Dong Kuk Lee
CPC classification number: H01L33/24 , F21K9/232 , F21Y2115/10 , H01L33/08 , H01L33/38
Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.
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公开(公告)号：US09076928B2
公开(公告)日：2015-07-07
申请号：US13906044
申请日：2013-05-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seong Seok Yang , Ki Seok Kim , Je Won Kim , Ju Bin Seo , Sang Seok Lee , Joon Sub Lee , Jin Bock Lee
Abstract: A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.
Abstract translation: 提供了半导体发光器件，并且包括具有第一下导电型半导体层和第二下导电型半导体层的保护元件。 第一和第二下电极分别连接到第一下导电型半导体层和第二下导电型半导体层。 发光结构包括依次形成在保护元件上的第一上导电型半导体层，有源层和第二上导电型半导体层。 第一上电极和第二上电极分别连接到第一上导电型半导体层和第二上导电型半导体层。
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公开(公告)号：US08946751B2
公开(公告)日：2015-02-03
申请号：US14015095
申请日：2013-08-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Bock Lee , Ki Seok Kim , Je Won Kim , Ju-Bin Seo , Seong Seok Yang , Sang Seok Lee , Joon Sub Lee
Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.
Abstract translation: 半导体发光器件包括依次层叠在基板上的第一导电型半导体层，有源层和第二导电型半导体层。 第一电极设置在第一导电型半导体层的一部分上。 电流扩散层设置在第二导电型半导体层上，并且包括露出第二导电型半导体层的一部分的开口。 第二电极覆盖电流扩散层的一部分和第二导电型半导体层的暴露部分，其中电流扩散层的部分靠近开口。
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