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    Light emitting diode module, display panel having the same and method of manufacturing the same
    1.
    发明授权
    Light emitting diode module, display panel having the same and method of manufacturing the same 有权

    公开(公告)号：US10388693B2

    公开(公告)日：2019-08-20

    申请号：US15984508

    申请日：2018-05-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Nam Goo Cha ,  Yong Il Kim ,  Young Soo Park

    IPC: H01L33/00 ,  H01L27/15 ,  H01L33/62 ,  H01L25/065 ,  H01L33/50 ,  H01L33/52 ,  H01L33/44 ,  H01L25/075

    Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter. Exemplary display panels and methods of manufacturing semiconductor devices and display panels are also disclosed.

    Light emitting device package
    2.
    发明授权
    Light emitting device package 有权

    公开(公告)号：US10230021B2

    公开(公告)日：2019-03-12

    申请号：US15279864

    申请日：2016-09-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yong Il Kim ,  Hyong Sik Won ,  Wan Tae Lim ,  Nam Goo Cha

    IPC: H01L33/50 ,  H01L33/08 ,  H01L33/32 ,  H01L25/075 ,  H01L33/44 ,  H01L33/38 ,  H01L33/58 ,  H01L27/15

    Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.

    LED light source module and display device
    3.
    发明授权
    LED light source module and display device 有权

    公开(公告)号：US10170666B2

    公开(公告)日：2019-01-01

    申请号：US15389808

    申请日：2016-12-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Nam Goo Cha ,  Yong Il Kim ,  Young Soo Park ,  Sung Hyun Sim ,  Hanul Yoo

    IPC: H01L33/08 ,  G09G3/20 ,  H01L33/38 ,  H01L33/50 ,  H01L33/58 ,  H01L25/075 ,  G09G3/32 ,  H01L33/46 ,  H01L33/62

    Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.

    Nanostructure semiconductor light emitting device
    6.
    发明授权
    Nanostructure semiconductor light emitting device 有权
    纳米结构半导体发光器件

    公开(公告)号：US09537051B2

    公开(公告)日：2017-01-03

    申请号：US14838635

    申请日：2015-08-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Nam Goo Cha ,  Jin Bock Lee ,  Dong Kuk Lee ,  Dong Hyun Cho ,  Min Wook Choi

    IPC: H01L33/00 ,  H01L33/24 ,  H01L33/08 ,  H01L33/38

    CPC classification number: H01L33/24 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/38 ,  H01L2224/48091 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00012

    Abstract: A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructures have different shapes.

    Abstract translation: 纳米结构半导体发光器件可以包括具有第一和第二区域并由第一导电型半导体材料形成的基极层; 设置在基底层上的多个发光纳米结构，每个发光纳米结构包括由第一导电型半导体材料形成的纳米孔，以及顺序地设置在纳米孔上的有源层和第二导电型半导体层; 设置在所述发光纳米结构上以与所述第二导电类型半导体层连接的接触电极; 连接到所述基底层的第一电极; 以及覆盖设置在多个发光纳米结构中的第二区域中的发光纳米结构中的至少一个发光纳米结构的接触电极的一部分的第二电极，其中设置在第二区域中的发光纳米结构和设置在第一区域中的发光纳米结构 多个发光纳米结构中的区域具有不同的形状。

    Method of manufacturing a nanostructure light emitting device by planarizing a surface of the device
    7.
    发明授权
    Method of manufacturing a nanostructure light emitting device by planarizing a surface of the device 有权
    通过使器件的表面平坦化来制造纳米结构发光器件的方法

    公开(公告)号：US09385266B2

    公开(公告)日：2016-07-05

    申请号：US14165168

    申请日：2014-01-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Nam Goo Cha ,  Dong Ho Kim ,  Geon Wook Yoo

    IPC: H01L33/00 ,  H01L33/08 ,  H01L33/24 ,  H01L33/06 ,  H01L33/36 ,  H01L33/44

    CPC classification number: H01L33/06 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/36 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

    Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, and a plurality of light emitting nanostructures. The base layer includes a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. The light emitting nanostructures are respectively disposed on the exposed regions of the base layer and include a plurality of nanocores having a first conductivity type semiconductor and having side surfaces provided as the same crystal planes. The light emitting nanostructures include an active layer and a second conductivity type semiconductor layer sequentially disposed on surfaces of the nanocores. Upper surfaces of the nanocores are provided as portions of upper surfaces of the light emitting nanostructures, and the upper surfaces of the light emitting nanostructures are substantially planar with each other.

    Abstract translation: 纳米结构半导体发光器件包括基极层，绝缘层和多个发光纳米结构。 基极层包括第一导电型半导体。 绝缘层设置在基底层上并具有多个开口，基底层的区域暴露在该开口中。 发光纳米结构分别设置在基层的露出区域上，并且包括多个具有第一导电型半导体的纳米孔，并具有设置为相同晶面的侧面。 发光纳米结构包括依次设置在纳米孔表面上的有源层和第二导电类型半导体层。 纳米孔的上表面被提供为发光纳米结构的上表面的部分，并且发光纳米结构的上表面彼此基本上是平面的。

    Light emitting diode module, display panel having the same and method of manufacturing the same
    8.
    发明授权
    Light emitting diode module, display panel having the same and method of manufacturing the same 有权

    公开(公告)号：US11251225B2

    公开(公告)日：2022-02-15

    申请号：US16864954

    申请日：2020-05-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Nam Goo Cha ,  Yong Il Kim ,  Young Soo Park

    IPC: H01L33/00 ,  H01L27/15 ,  H01L25/065 ,  H01L33/50 ,  H01L33/52 ,  H01L33/62 ,  H01L25/075 ,  H01L33/44

    Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter. Exemplary display panels and methods of manufacturing semiconductor devices and display panels are also disclosed.

    Light source module and display apparatus having the same
    9.
    发明授权
    Light source module and display apparatus having the same 有权

    公开(公告)号：US10204962B2

    公开(公告)日：2019-02-12

    申请号：US15218483

    申请日：2016-07-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Nam Goo Cha ,  Ki Seok Kim ,  Yun Hee Lee

    IPC: G09F9/33 ,  H01L27/15 ,  F21V9/14 ,  F21V8/00 ,  H01L33/50 ,  H01L33/62 ,  H05B33/08 ,  G09F13/00 ,  H01L25/075

    Abstract: A display apparatus may include a light source module that may include a substrate having a plurality of chip mounting areas of which each has a connection pad disposed therein, and a plurality of semiconductor light emitting devices electrically coupled to separate connection pads. The display apparatus may include a black matrix on the substrate and having a plurality of holes corresponding to the pattern of chip mounting areas. The semiconductor light emitting devices may be in separate, respective holes to be electrically coupled to separate connection pads. The display apparatus may include unit pixels, where each unit pixel includes multiple adjacent semiconductor light emitting devices. The semiconductor light emitting devices may be removably coupled to separate connection pads, and a semiconductor light emitting device may be interchangeably swapped from a connection pad.

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