公开(公告)号：US20140246648A1

公开(公告)日：2014-09-04

申请号：US14186540

申请日：2014-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Jun Im ,  Dong Hyun Cho ,  Jong Rak Sohn ,  Yong Min Kwon

IPC: H01L33/38

CPC classification number: H01L33/382 ,  H01L33/62 ,  H01L2224/13

Abstract: A light emitting device package, comprises a light emitting structure having first and second electrodes insulated from each other; and a support structure. The support structure comprises: a first support electrode electrically connected to the first electrode of the light emitting structure; a second support electrode electrically connected to the second electrode of the light emitting structure, the second support electrode spaced apart from, and electrically insulated from, the first support electrode; and a support connection portion between the first support electrode and the second support electrode. The light emitting structure includes a protrusion portion that protrudes in a horizontal direction beyond a sidewall of at least one of the first support electrode and the second support electrode so that a void is present below the protrusion portion and above a plane extending from bottoms of the first and second support electrodes.

Abstract translation: 发光器件封装，包括具有彼此绝缘的第一和第二电极的发光结构; 和支撑结构。 支撑结构包括：电连接到发光结构的第一电极的第一支撑电极; 电连接到所述发光结构的第二电极的第二支撑电极，所述第二支撑电极与所述第一支撑电极间隔开并与所述第一支撑电极电绝缘; 以及第一支撑电极和第二支撑电极之间的支撑连接部分。 发光结构包括突出部分，该突出部分在水平方向上突出超过第一支撑电极和第二支撑电极中的至少一个的侧壁，使得在突出部分的下方和从底部的底部延伸的平面之下存在空隙 第一和第二支撑电极。

公开(公告)号：US09705041B2

公开(公告)日：2017-07-11

申请号：US14186540

申请日：2014-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Jun Im ,  Dong Hyun Cho ,  Jong Rak Sohn ,  Yong Min Kwon

IPC: H01L33/38 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/62 ,  H01L2224/13

Abstract: A light emitting device package, comprises a light emitting structure having first and second electrodes insulated from each other; and a support structure. The support structure comprises: a first support electrode electrically connected to the first electrode of the light emitting structure; a second support electrode electrically connected to the second electrode of the light emitting structure, the second support electrode spaced apart from, and electrically insulated from, the first support electrode; and a support connection portion between the first support electrode and the second support electrode. The light emitting structure includes a protrusion portion that protrudes in a horizontal direction beyond a sidewall of at least one of the first support electrode and the second support electrode so that a void is present below the protrusion portion and above a plane extending from bottoms of the first and second support electrodes.

公开(公告)号：US09537051B2

公开(公告)日：2017-01-03

申请号：US14838635

申请日：2015-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Goo Cha ,  Jin Bock Lee ,  Dong Kuk Lee ,  Dong Hyun Cho ,  Min Wook Choi

IPC: H01L33/00 ,  H01L33/24 ,  H01L33/08 ,  H01L33/38

CPC classification number: H01L33/24 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/38 ,  H01L2224/48091 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructures have different shapes.

Abstract translation: 纳米结构半导体发光器件可以包括具有第一和第二区域并由第一导电型半导体材料形成的基极层; 设置在基底层上的多个发光纳米结构，每个发光纳米结构包括由第一导电型半导体材料形成的纳米孔，以及顺序地设置在纳米孔上的有源层和第二导电型半导体层; 设置在所述发光纳米结构上以与所述第二导电类型半导体层连接的接触电极; 连接到所述基底层的第一电极; 以及覆盖设置在多个发光纳米结构中的第二区域中的发光纳米结构中的至少一个发光纳米结构的接触电极的一部分的第二电极，其中设置在第二区域中的发光纳米结构和设置在第一区域中的发光纳米结构 多个发光纳米结构中的区域具有不同的形状。