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Patent Agency Ranking
公开(公告)号：US11043445B2
公开(公告)日：2021-06-22
申请号：US16386393
申请日：2019-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ju-Bin Seo , Su-Jeong Park , Tae-Seong Kim , Kwang-Jin Moon , Dong-Chan Lim , Ju-Il Choi
IPC: H01L23/48 , H01L23/31 , H01L23/522 , H01L23/532 , H01L21/768 , H01L27/146
Abstract: A semiconductor device is provided. The semiconductor device includes a first insulating interlayer disposed on a first surface of a substrate; a pad pattern disposed on a lower surface of the first insulating interlayer, the pad pattern including a first copper pattern; and a through silicon via passing through the substrate and the first insulating interlayer, and contacting the first copper pattern of the pad pattern. The through silicon via includes a first portion passing through the substrate and the first insulating interlayer, and a second portion under the first portion and extending to a portion of the first copper pattern in the pad pattern. A boundary of the through silicon via has a bent portion between the first portion and the second portion.
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公开(公告)号：US11600552B2
公开(公告)日：2023-03-07
申请号：US17344138
申请日：2021-06-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ju-Bin Seo , Su-Jeong Park , Tae-Seong Kim , Kwang-Jin Moon , Dong-Chan Lim , Ju-Il Choi
IPC: H01L23/48 , H01L23/31 , H01L23/498 , H01L23/522 , H01L23/538 , H01L27/146 , H01L21/768
Abstract: A semiconductor device is provided. The semiconductor device includes a first insulating interlayer disposed on a first surface of a substrate; a pad pattern disposed on a lower surface of the first insulating interlayer, the pad pattern including a first copper pattern; and a through silicon via passing through the substrate and the first insulating interlayer, and contacting the first copper pattern of the pad pattern. The through silicon via includes a first portion passing through the substrate and the first insulating interlayer, and a second portion under the first portion and extending to a portion of the first copper pattern in the pad pattern. A boundary of the through silicon via has a bent portion between the first portion and the second portion.
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公开(公告)号：US08946751B2
公开(公告)日：2015-02-03
申请号：US14015095
申请日：2013-08-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Bock Lee , Ki Seok Kim , Je Won Kim , Ju-Bin Seo , Seong Seok Yang , Sang Seok Lee , Joon Sub Lee
Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.
Abstract translation: 半导体发光器件包括依次层叠在基板上的第一导电型半导体层，有源层和第二导电型半导体层。 第一电极设置在第一导电型半导体层的一部分上。 电流扩散层设置在第二导电型半导体层上，并且包括露出第二导电型半导体层的一部分的开口。 第二电极覆盖电流扩散层的一部分和第二导电型半导体层的暴露部分，其中电流扩散层的部分靠近开口。
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公开(公告)号：US09159882B2
公开(公告)日：2015-10-13
申请号：US14501232
申请日：2014-09-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-Wook Hwang , Ju-Bin Seo , Ji-Hye Yeon , Geon-Wook Yoo , Dong-hoon Lee
CPC classification number: H01L33/46 , F21K9/232 , F21Y2115/10 , H01L33/08 , H01L33/24 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/54 , H01L2224/16225
Abstract: A semiconductor light-emitting device includes a first conductive type semiconductor layer having a main surface, a plurality of vertical type light-emitting structures protruding upward from the first conductive type semiconductor layer; a transparent electrode layer covering the plurality of vertical type light-emitting structures; and an insulation-filling layer disposed on the transparent electrode layer. The insulation-filling layer extends parallel to the first conductive type semiconductor layer so as to cover the plurality of vertical type light-emitting structures. A selected one of the first conductive type semiconductor layer and the insulation-filling layer, which is disposed on a light transmission path through which light generated from the plurality of vertical type light-emitting structures is radiated externally, has an uneven outer surface. The uneven outer surface is opposite to an inner surface of the selected one, and the inner surface faces the plurality of vertical type light-emitting structures.
Abstract translation: 半导体发光器件包括具有主表面的第一导电类型半导体层，从第一导电类型半导体层向上突出的多个垂直型发光结构; 覆盖多个垂直型发光结构的透明电极层; 以及设置在所述透明电极层上的绝缘填充层。 绝缘填充层平行于第一导电类型半导体层延伸以覆盖多个垂直型发光结构。 设置在从多个垂直型发光结构产生的光从外部照射的光传输路径上的第一导电类型半导体层和绝缘填充层中选择的一个具有不平坦的外表面。 不平坦的外表面与所选择的外表面的内表面相反，并且内表面面向多个垂直型发光结构。
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公开(公告)号：US20140070252A1
公开(公告)日：2014-03-13
申请号：US14015095
申请日：2013-08-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： JIN BOCK LEE , Ki Seok Kim , Je Won Kim , Ju-Bin Seo , Seong-Seok Yang , Sang Seok Lee , Joon Sub Lee
IPC: H01L33/36
Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.
Abstract translation: 半导体发光器件包括依次层叠在基板上的第一导电型半导体层，有源层和第二导电型半导体层。 第一电极设置在第一导电型半导体层的一部分上。 电流扩散层设置在第二导电型半导体层上，并且包括露出第二导电型半导体层的一部分的开口。 第二电极覆盖电流扩散层的一部分和第二导电型半导体层的暴露部分，其中电流扩散层的部分靠近开口。
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