公开(公告)号：US09601665B2

公开(公告)日：2017-03-21

申请号：US14828004

申请日：2015-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Hyun Sim ,  Geon Wook Yoo ,  Mi Hyun Kim ,  Dong Hoon Lee ,  Jin Bock Lee ,  Je Won Kim ,  Hye Seok Noh ,  Dong Kuk Lee

IPC: H01L33/24 ,  H01L33/14 ,  H01L33/08 ,  H01L33/38

CPC classification number: H01L33/24 ,  F21K9/232 ,  F21Y2115/10 ,  H01L33/08 ,  H01L33/38

Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.

公开(公告)号：US10326061B2

公开(公告)日：2019-06-18

申请号：US15486982

申请日：2017-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan Tae Lim ,  Sung Hyun Sim ,  Hanul Yoo ,  Yong Il Kim ,  Hye Seok Noh ,  Ji Hye Yeon

IPC: H01L33/50 ,  H01L27/15 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62

Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.

公开(公告)号：US11296260B2

公开(公告)日：2022-04-05

申请号：US16438948

申请日：2019-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Sub Lee ,  Deuk Seok Chung ,  Hye Seok Noh ,  Young Jin Choi

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L27/15 ,  H01L25/075 ,  H01L33/32

Abstract: A light emitting device package including a partition structure having first and second surfaces, and first to third light emission windows penetrating through the first and second surfaces, a cell array including first to third light emitting devices on the first surface of the partition structure and overlapping the first to third light emission windows, each of the first to third light emitting devices including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, first and second wavelength conversion portions filling interiors of the first and second light emission windows, and having a meniscus-shaped interfaces, a first encapsulating portion including a light-transmissive organic film layer that fills the third light emission window and covers the first and second wavelength conversion portions, and a second encapsulating portion covering the first and second encapsulating portions and including a light-transmissive inorganic film layer.

公开(公告)号：US20180175261A1

公开(公告)日：2018-06-21

申请号：US15617669

申请日：2017-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hanul Yoo ,  Yong ll Kim ,  Sung Hyun Sim ,  Wan Tae Lim ,  Hye Seok Noh ,  Ji Hye Yeon

IPC: H01L33/58 ,  H01L33/06 ,  H01L33/32 ,  H01L33/22 ,  H01L33/12 ,  H01L33/50 ,  H01L33/40 ,  H01L33/00

CPC classification number: H01L33/405 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/12 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/46 ,  H01L33/501 ,  H01L33/505 ,  H01L2933/0016 ,  H01L2933/0041

Abstract: A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.

公开(公告)号：US10566318B2

公开(公告)日：2020-02-18

申请号：US16008276

申请日：2018-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Gun Lee ,  Yong Il Kim ,  Hye Seok Noh ,  Han Kyu Seong ,  Sung Hyun Sim ,  Ha Nul Yoo

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/54 ,  H01L33/62 ,  H01L27/12 ,  H01L33/60 ,  H01L33/06 ,  H01L33/32 ,  H01L33/30 ,  H01L33/40

Abstract: A light emitting device package includes a first wavelength conversion portion and a second wavelength conversion portion to provide a wavelength of incident light to provide light having a converted wavelength, a light-transmissive partition structure extending along side surfaces of the first and second wavelength conversion portions along a thickness direction to separate the first and second wavelength conversion portions part from each other along a direction crossing the thickness direction, and a cell array including a first light emitting device, a second light emitting device and a third light emitting device, overlapping the first wavelength conversion portion, the second wavelength conversion portion and the light-transmissive partition structure, respectively, along the thickness direction.

公开(公告)号：US10103301B2

公开(公告)日：2018-10-16

申请号：US15617669

申请日：2017-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hanul Yoo ,  Yong Il Kim ,  Sung Hyun Sim ,  Wan Tae Lim ,  Hye Seok Noh ,  Ji Hye Yeon

IPC: H01L33/58 ,  H01L33/06 ,  H01L33/32 ,  H01L33/22 ,  H01L33/12 ,  H01L33/50 ,  H01L33/40 ,  H01L33/00 ,  F21K9/235 ,  F21V29/76 ,  F21K9/238 ,  F21K9/232

Abstract: A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.

公开(公告)号：US10991857B2

公开(公告)日：2021-04-27

申请号：US16442870

申请日：2019-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan Tae Lim ,  Sung Hyun Sim ,  Hanul Yoo ,  Yong Il Kim ,  Hye Seok Noh ,  Ji Hye Yeon

IPC: H01L33/50 ,  H01L25/075 ,  H01L27/15 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L33/44

Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.

公开(公告)号：US10714667B2

公开(公告)日：2020-07-14

申请号：US16020071

申请日：2018-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye Seok Noh ,  Young Jin Choi ,  Yong Il Kim ,  Han Kyu Seong ,  Dong Gun Lee ,  Jin Sub Lee

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/50 ,  H04N5/225 ,  H01L33/26 ,  H01L33/56 ,  H01L27/15 ,  H01L33/40 ,  H01L25/075

Abstract: A method of manufacturing a light emitting device includes forming light emitting devices on a support portion, each of the light emitting devices including first to third light emitting cells respectively emitting light of different colors; supplying test power to at least a portion of the light emitting devices using a multi-probe; acquiring an image from the light emitted from the portion of the light emitting devices to which the test power is supplied using an image sensor; identifying normal light emitting devices of the portion of the light emitting devices by determining whether a defect is present in each of the light emitting devices of the portion of the light emitting devices by comparing the image acquired by the image sensor with a reference image; and based on the identifying step, measuring optical characteristics of each of the light emitting devices identified as normal of the portion of the light emitting devices.

公开(公告)号：US10333035B2

公开(公告)日：2019-06-25

申请号：US15337215

申请日：2016-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo Cha ,  Sung Hyun Sim ,  Wan tae Lim ,  Hye Seok Noh ,  Hanul Yoo

IPC: H01L33/50 ,  H01L33/60 ,  H01L27/15

Abstract: A method of manufacturing a light emitting device package is provided. The method includes preparing a film strip including one or more light blocking regions and one or more wavelength conversion regions, preparing light emitting devices, each including one or more light emitting regions, bonding the film strip to the light emitting devices so as to dispose the one or more wavelength conversion regions on the one or more light emitting regions of each of the light emitting devices, and cutting the film strip and the light emitting devices into individual device units.

公开(公告)号：US10217914B2

公开(公告)日：2019-02-26

申请号：US15163204

申请日：2016-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo Cha ,  Wan Tae Lim ,  Yong Il Kim ,  Hye Seok Noh ,  Eun Joo Shin ,  Sung Hyun Sim ,  Hanul Yoo

IPC: H01L29/49 ,  H01L33/58 ,  H01L33/50 ,  H01L33/44 ,  H01L33/00 ,  F21Y103/10 ,  F21Y115/10 ,  F21S8/02 ,  F21V23/00 ,  F21K9/275 ,  F21K9/237

Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.