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公开(公告)号：US10361248B2
公开(公告)日：2019-07-23
申请号：US15352933
申请日：2016-11-16
发明人： Jin Sub Lee , Han Kyu Seong , Yong Il Kim , Jung Sub Kim , Seul Gee Lee
IPC分类号： H01L25/16 , H01L27/15 , H01L33/00 , H01L33/44 , H01L33/50 , H05B33/08 , H05B37/02 , H01L25/075
摘要： A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.
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2.发明授权Nanostructure semiconductor light emitting device having rod and capping layers of differing heights 有权纳米结构半导体发光器件具有不同高度的棒和封盖层公开(公告)号：US09595637B2
公开(公告)日：2017-03-14
申请号：US14920509
申请日：2015-10-22
发明人： Hyun Seong Kum , Dae Myung Chun , Ji Hye Yeon , Han Kyu Seong , Jin Sub Lee , Young Jin Choi , Jae Hyeok Heo
CPC分类号： H01L33/24 , H01L33/007 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/42 , H01L33/44 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures.
摘要翻译： 提供了一种半导体发光器件，其包括由第一导电型半导体材料形成的基底层和设置在基底层上以彼此间隔开的多个发光纳米结构，并且包括第一导电型 半导体芯，有源层和第二导电型半导体层。 第一导电型半导体芯包括从基层向上延伸的棒层，以及设置在棒层上的封盖层。 在多个发光纳米结构的至少一部分中，棒层的高度不同，并且在多个发光纳米结构的至少一部分中，覆盖层的高度不同。
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公开(公告)号：US09842960B2
公开(公告)日：2017-12-12
申请号：US14867659
申请日：2015-09-28
发明人： Jae Hyeok Heo , Jin Sub Lee , Young Jin Choi , Hyun Seong Kum , Ji Hye Yeon , Dae Myung Chun , Jung Sub Kim , Han Kyu Seong
CPC分类号： H01L33/005 , H01L33/06 , H01L33/08 , H01L33/145 , H01L33/24
摘要： According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.
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公开(公告)号：US10714667B2
公开(公告)日：2020-07-14
申请号：US16020071
申请日：2018-06-27
发明人： Hye Seok Noh , Young Jin Choi , Yong Il Kim , Han Kyu Seong , Dong Gun Lee , Jin Sub Lee
IPC分类号： H01L33/00 , H01L33/62 , H01L33/50 , H04N5/225 , H01L33/26 , H01L33/56 , H01L27/15 , H01L33/40 , H01L25/075
摘要： A method of manufacturing a light emitting device includes forming light emitting devices on a support portion, each of the light emitting devices including first to third light emitting cells respectively emitting light of different colors; supplying test power to at least a portion of the light emitting devices using a multi-probe; acquiring an image from the light emitted from the portion of the light emitting devices to which the test power is supplied using an image sensor; identifying normal light emitting devices of the portion of the light emitting devices by determining whether a defect is present in each of the light emitting devices of the portion of the light emitting devices by comparing the image acquired by the image sensor with a reference image; and based on the identifying step, measuring optical characteristics of each of the light emitting devices identified as normal of the portion of the light emitting devices.
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公开(公告)号：US09269865B2
公开(公告)日：2016-02-23
申请号：US14516470
申请日：2014-10-16
发明人： Dae Myung Chun , Jung Sub Kim , Jin Sub Lee , Sam Mook Kang , Yeon Woo Seo , Han Kyu Seong , Young Jin Choi , Jae Hyeok Heo
CPC分类号： H01L33/24 , H01L33/0079 , H01L33/08 , H01L33/145 , H01L33/38 , H01L33/62 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.
摘要翻译： 纳米结构半导体发光器件可以包括第一导电型半导体基底层，掩模层，设置在基底层上并具有暴露基底部分的多个开口，多个发光纳米结构设置在多个开口中 以及设置在掩模层上的多晶硅电流抑制层。 多晶硅电流抑制层的至少一部分设置在第二导电型半导体层的下方。 每个发光纳米结构包括第一导电型半导体纳米孔，有源层和第二导电型半导体层。
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公开(公告)号：US11411145B2
公开(公告)日：2022-08-09
申请号：US17023629
申请日：2020-09-17
发明人： Jin Sub Lee , Ju Yeon Jeong
摘要： A light-emitting element package is provided. The light-emitting element package includes light-emitting structures spaced from each other, the light-emitting structures including first, second and third light-emitting structures, each of the light-emitting structures being configured to emit light of a first color; a first wavelength conversion layer provided on the first light-emitting structure at a first position corresponding to the first light-emitting structure, the first wavelength conversion layer being configured to convert light of the first color into light of a second color; a first oxide film provided on the first wavelength conversion layer; and a second wavelength conversion layer disposed in the first oxide film at a second position corresponding to the second light-emitting structure, the second wavelength conversion layer being configured to convert light of the first color into light of a third color. The first wavelength conversion layer and the second wavelength conversion layer have different structures.
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公开(公告)号：US11296260B2
公开(公告)日：2022-04-05
申请号：US16438948
申请日：2019-06-12
发明人： Jin Sub Lee , Deuk Seok Chung , Hye Seok Noh , Young Jin Choi
摘要： A light emitting device package including a partition structure having first and second surfaces, and first to third light emission windows penetrating through the first and second surfaces, a cell array including first to third light emitting devices on the first surface of the partition structure and overlapping the first to third light emission windows, each of the first to third light emitting devices including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, first and second wavelength conversion portions filling interiors of the first and second light emission windows, and having a meniscus-shaped interfaces, a first encapsulating portion including a light-transmissive organic film layer that fills the third light emission window and covers the first and second wavelength conversion portions, and a second encapsulating portion covering the first and second encapsulating portions and including a light-transmissive inorganic film layer.
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公开(公告)号：US10707393B2
公开(公告)日：2020-07-07
申请号：US15995546
申请日：2018-06-01
发明人： Dong Gun Lee , Yong Il Kim , Han Kyu Seong , Ji Hye Yeon , Jin Sub Lee , Young Jin Choi
IPC分类号： H01L33/00 , H01L33/62 , H01L33/44 , H01L33/60 , H01L25/075 , H01L33/50 , H01L27/15 , H01L33/46
摘要： A light emitting device package including a cell array including first, second and third light emitting devices each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, the cell array having a first surface and a second surface opposing the first surface, a light-transmissive substrate including a first wavelength conversion portion and a second wavelength conversion portion corresponding to the first light emitting device and the second light emitting device, respectively, and bonded to the first surface, and a eutectic bonding layer including a first light emitting window, a second light emitting window and a third light emitting window corresponding to the first light emitting device, the second light emitting device and the third light emitting device, respectively, and bonding the light-transmissive substrate and the first to third light emitting devices to each other may be provided.
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9.发明授权公开(公告)号：US09978907B2
公开(公告)日：2018-05-22
申请号：US15147039
申请日：2016-05-05
发明人： Jung Sub Kim , Dong Hyun Lee , Jin Sub Lee , Kyung Wook Hwang , In Su Shin , Eui Joon Yoon , Gun Do Lee , Jeong Hwan Jang
摘要： A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlxInyGa1-x-yN (0≤x+y≤1, 0≤y
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公开(公告)号：US09461199B2
公开(公告)日：2016-10-04
申请号：US14752814
申请日：2015-06-26
发明人： Jae Hyeok Heo , Jung Sub Kim , Young Jin Choi , Jin Sub Lee , Sam Mook Kang , Yeon Woo Seo , Han Kyu Seong , Dae Myung Chun
IPC分类号： H01L31/00 , H01L33/06 , H01L27/15 , H01L33/32 , H01L33/62 , H01L33/24 , H01L33/00 , H05B33/08
CPC分类号： H01L33/06 , H01L27/153 , H01L33/0025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/32 , H01L33/62 , H01L2224/16245 , H01L2224/48091 , H01L2224/48227 , H05B33/0803 , H01L2924/00014
摘要： There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.
摘要翻译： 提供了一种纳米结构半导体发光器件，其包括由第一导电型半导体形成的基极层，设置在基底层上并具有多个开口的绝缘层，以及多个发光纳米结构， 开口。 每个发光纳米结构包括由第一导电型半导体形成的纳米孔，以及依次设置在纳米孔表面上的有源层和第二导电型半导体层。 多个发光纳米结构通过相同的生长工艺形成，并分成n组（其中n为2以上的整数），每组具有至少两个发光纳米结构。 纳米孔的直径，高度和间距中的至少一个是不同的，使得有源层通过组发射具有不同波长的光。
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