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公开(公告)号：US09842960B2
公开(公告)日：2017-12-12
申请号：US14867659
申请日：2015-09-28
发明人： Jae Hyeok Heo , Jin Sub Lee , Young Jin Choi , Hyun Seong Kum , Ji Hye Yeon , Dae Myung Chun , Jung Sub Kim , Han Kyu Seong
CPC分类号： H01L33/005 , H01L33/06 , H01L33/08 , H01L33/145 , H01L33/24
摘要： According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.
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公开(公告)号：US10338876B2
公开(公告)日：2019-07-02
申请号：US15333692
申请日：2016-10-25
发明人： Jun Youn Kim , Hyun Seong Kum , Young Hwan Park
IPC分类号： G06F3/14 , G02F1/1333 , G02F1/1335 , G02F1/1343 , G02F1/1368 , G09G3/34 , H01L25/075 , H01L27/32 , H01L33/50 , H01L33/54 , H01L33/62 , G02F1/1339 , G02F1/1362 , G09G3/3225 , G09G3/36 , H01L27/12
摘要： A multivision apparatus may include a display panel that includes a display screen including a first region and an adjacent second region. The first region may include first pixels, and the second region may include second pixels. The first pixels and the second pixels have different structures. The display panel may display a single image across the first region and the second region of the display screen. The multivision apparatus may include an array of interconnected display panels configured to collectively display an image, based on each given display panel displaying a separate sub-image in the first and second regions of the given display panel.
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3.发明授权Nanostructure semiconductor light emitting device having rod and capping layers of differing heights 有权纳米结构半导体发光器件具有不同高度的棒和封盖层公开(公告)号：US09595637B2
公开(公告)日：2017-03-14
申请号：US14920509
申请日：2015-10-22
发明人： Hyun Seong Kum , Dae Myung Chun , Ji Hye Yeon , Han Kyu Seong , Jin Sub Lee , Young Jin Choi , Jae Hyeok Heo
CPC分类号： H01L33/24 , H01L33/007 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/42 , H01L33/44 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures.
摘要翻译： 提供了一种半导体发光器件，其包括由第一导电型半导体材料形成的基底层和设置在基底层上以彼此间隔开的多个发光纳米结构，并且包括第一导电型 半导体芯，有源层和第二导电型半导体层。 第一导电型半导体芯包括从基层向上延伸的棒层，以及设置在棒层上的封盖层。 在多个发光纳米结构的至少一部分中，棒层的高度不同，并且在多个发光纳米结构的至少一部分中，覆盖层的高度不同。
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公开(公告)号：US09553235B2
公开(公告)日：2017-01-24
申请号：US14627721
申请日：2015-02-20
发明人： Dae Myung Chun , Ji Hye Yeon , Jae Hyeok Heo , Hyun Seong Kum , Han Kyu Seong , Young Jin Choi
CPC分类号： H01L33/24 , H01L33/007 , H01L33/08 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A method for manufacturing a semiconductor light emitting device may include steps of forming a mask layer and a mold layer having a plurality of openings exposing portions of a base layer, forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape, and forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores. The step of forming the plurality of first conductivity-type semiconductor cores may include forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion, removing the mold layer, and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape.
摘要翻译： 半导体发光器件的制造方法可以包括以下步骤：形成掩模层和模具层，所述模具层具有暴露基底层的部分的多个开口，形成多个第一导电型半导体芯，每个第一导电型半导体芯包括主体部分延伸穿过 从底层开口的每个开口和设置在主体部分上的具有圆锥形状的尖端部分，并且在多个第一导电型半导体芯中的每一个上形成有源层和第二导电类型半导体层。 形成多个第一导电型半导体芯的步骤可以包括形成第一区域，使得尖端部分的顶点位于主体部分的中心垂直轴线上，去除模具层，并形成附加生长区域 在第一区域上使得主体部分具有六棱柱形状。
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公开(公告)号：US09461205B2
公开(公告)日：2016-10-04
申请号：US14338174
申请日：2014-07-22
发明人： Nam Goo Cha , Hyun Seong Kum , Ju Bin Seo , Dong Hoon Lee
CPC分类号： H01L33/24 , H01L33/08 , H01L33/18 , H01L33/385
摘要： A nanostructure semiconductor light emitting device includes a base layer, an insulating layer and a plurality of light emitting nanostructures. The base layer is formed of a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. Each of the light emitting nanostructures is disposed on the exposed regions of the base layer and includes nanocore formed of a first conductivity type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on side surfaces of the nanocore. Upper surfaces of the light emitting nanostructures are non-planar and contain portions free of the second conductivity-type semiconductor layer in order to prevent light emissions during device driving.
摘要翻译： 纳米结构半导体发光器件包括基底层，绝缘层和多个发光纳米结构。 基层由第一导电型半导体形成。 绝缘层设置在基底层上并具有多个开口，基底层的区域暴露在该开口中。 每个发光纳米结构设置在基底层的暴露区域上，并且包括由第一导电型半导体形成的纳米孔，以及顺序地设置在纳米孔的侧表面上的有源层和第二导电类型半导体层。 发光纳米结构的上表面是非平面的，并且包含不含第二导电型半导体层的部分，以便防止器件驱动期间的光发射。
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