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    Display driving circuit and display device including the same
    2.
    发明授权
    Display driving circuit and display device including the same 有权

    公开(公告)号：US10115334B2

    公开(公告)日：2018-10-30

    申请号：US15290334

    申请日：2016-10-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chiahsin Lin ,  Chih-Yang Liao ,  Jae Yoon Kim

    IPC: G09G3/20

    Abstract: A display driving circuit comprising a level shift circuit, the level shift circuit including a level shift device configured to receive a source power applied thereto, and to generate an output signal by amplifying an input signal; a power switching circuit configured to provide any one of first to third selection powers as the source power to the level shift device, the first to third selection powers being different from one another; and a switch control circuit configured to change the first selection power to the second or third selection power based on a change of voltage levels of the first to third selection powers.

    Display device including light emitting diode and method of manufacturing the same
    5.
    发明授权
    Display device including light emitting diode and method of manufacturing the same 有权

    公开(公告)号：US10784308B2

    公开(公告)日：2020-09-22

    申请号：US15955894

    申请日：2018-04-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae Yoon Kim ,  Young Sub Shin

    IPC: H01L27/15 ,  H01L33/50 ,  H01L33/00 ,  H01L27/12 ,  H01L33/62 ,  H01L29/66 ,  H01L29/786 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/46 ,  H01L33/58

    Abstract: A display device including pixels respectively containing a plurality of subpixels, the display device comprises: a light emitting diode (LED) array including a plurality of LED cells, the plurality of LED cells provided in the plurality of subpixels, the plurality of LED cells configured to emit light having substantially the same wavelength, each of the plurality of LED cells having a first surface and a second surface; thin-film transistor (TFT) circuitry including a plurality of TFT cells, each of the plurality of TFT cells disposed on the first surface of an LED cell of the plurality of LED cells and including source and drain regions and a gate electrode disposed between the source and drain regions; a wavelength conversion pattern disposed on the second surface of an LED cell of the plurality of LED cells, the wavelength conversion pattern including a composite of a quantum dot and/or a polymer, the quantum dot configured to emit different colors of light from colors of light emitted from other quantum dots of other wavelength conversion patterns; and a light blocking wall disposed between two of the plurality of subpixels including the plurality of LED cells and between wavelength conversion patterns to separate the plurality of subpixels.

    SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING FLOATING CONDUCTIVE PATTERN
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING FLOATING CONDUCTIVE PATTERN 审中-公开

    公开(公告)号：US20180198022A1

    公开(公告)日：2018-07-12

    申请号：US15725438

    申请日：2017-10-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Young Kyu Sung ,  Jae Yoon Kim ,  Tae Hun Kim ,  Gam Han Yong ,  Dong Yeoul Lee ,  Su Yeol Lee

    IPC: H01L33/08 ,  H01L33/38 ,  H01L33/20

    CPC classification number: H01L33/08 ,  H01L25/0753 ,  H01L33/20 ,  H01L33/382 ,  H01L33/46

    Abstract: A semiconductor light emitting device including a floating conductive pattern is provided. The semiconductor light emitting device includes a first semiconductor layer including a recessed region and a protruding region, an active layer and a second semiconductor layer disposed on the protruding region, a contact structure disposed on the second semiconductor layer, a lower insulating pattern covering the first semiconductor layer and the contact structure, and having first and second openings, a first conductive pattern disposed on the lower insulating pattern and extending into the first opening, a second conductive pattern disposed on the lower insulating pattern and extending into the second opening, and a floating conductive pattern disposed on the lower insulating pattern. The first and second conductive patterns and the floating conductive pattern have the same thickness on the same plane.

    Wafer defect test apparatus, wafer defect test system, wafer test method and fabrication method of a wafer
    8.
    发明授权
    Wafer defect test apparatus, wafer defect test system, wafer test method and fabrication method of a wafer 有权

    公开(公告)号：US12282317B2

    公开(公告)日：2025-04-22

    申请号：US17680958

    申请日：2022-02-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Hee Lee ,  Jae Yoon Kim ,  Jung Hwan Moon ,  Jung Hoon Bak ,  Kyu-Baik Chang ,  Jae Hoon Jeong ,  Min Kyoung Joo

    IPC: G05B19/418 ,  G06N5/02

    Abstract: A wafer defect test apparatus in which a defect prediction performance is improved and a simulation time is shortened is provided. The wafer defect test apparatus comprises a wafer variable generator which receives a first structural measurement data and a first process condition data of a first wafer, and a second structural measurement data and a second process condition data of a second wafer, generates a first process variable and a second process variable based on the first structural measurement data and the first process condition data, and generates a third process variable and a fourth process variable based on the second structural measurement data and the second process condition data, an abnormal wafer index generating circuit which generates a first wafer vector of the first process variable and second process variable, generates a second wafer vector of the third process variable and fourth process variable, calculates a first Euclidean distance between the first wafer vector and the second wafer vector, calculates a first Cosine distance between the first wafer vector and the second wafer vector, and generates a first abnormal wafer index of the first wafer based on a product of the first Euclidean distance and the first Cosine distance, and a prediction model generating circuit which receives a first characteristic variable which is a test result of the first wafer, and generates a wafer defect prediction model through a regression based on the first process variable, the second process variable, the first characteristic variable, and the first abnormal wafer index.

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    9.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
    半导体发光元件

    公开(公告)号：US20140131759A1

    公开(公告)日：2014-05-15

    申请号：US14129524

    申请日：2011-07-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae Yoon Kim ,  Je Won Kim ,  Jin Bock Lee ,  Seok Min Hwang ,  Hae Soo Ha ,  Su Yeol Lee

    IPC: H01L33/38

    CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/382 ,  H01L2933/0016

    Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer formed in a first region corresponding to a partial region of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region different from the first region on the upper surface of the n-type semiconductor layer, and having an n-type pad and first and second n-type fingers, and a p-type electrode formed on the p-type semiconductor layer, and having a p-type pad and a p-type finger, wherein the n-type semiconductor layer, the active layer, and the p-type semiconductor layer form a light emitting structure, and a region in which the n-type and p-type fingers intersect to overlap with each other is formed.

    Abstract translation: 半导体发光器件包括形成在对应于n型半导体层的上表面的部分区域的第一区域中的n型半导体层，有源层和p型半导体层，n型电极 形成在与n型半导体层的上表面上的第一区域不同的第二区域中，并且具有n型焊盘和第一和第n型指状物以及形成在p型上的p型电极 半导体层，并且具有p型焊盘和p型指状物，其中所述n型半导体层，所述有源层和所述p型半导体层形成发光结构，以及其中所述n型半导体层， 形成彼此重叠的类型和p型手指。

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