公开(公告)号：US20250040443A1

公开(公告)日：2025-01-30

申请号：US18776690

申请日：2024-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Unghwan Pi ,  Stuart Papworth Parkin ,  Jaechun Jeon ,  Jaekeun Kim ,  Andrea Migliorini

IPC: H10N50/01 ,  H10B61/00 ,  H10N50/10

Abstract: According to a method of manufacturing a magnetic memory device, various types of magnetic memory devices can be manufactured at low cost by manufacturing a plurality of magnetic modules by using a delamination phenomenon of pattern segments and stacking the plurality of magnetic modules to complete a stacked memory device.

公开(公告)号：US20250029644A1

公开(公告)日：2025-01-23

申请号：US18773949

申请日：2024-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Unghwan Pi ,  Stuart Papworth Parkin ,  Jaechun Jeon ,  Jaekeun Kim ,  Andrea Migliorini

IPC: G11C11/16 ,  G11C11/18 ,  G11C19/08 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80

Abstract: A magnetic memory device includes a lower magnetic track layer extending in a first direction and including a plurality of first magnetic domains, a spacer layer on the lower magnetic track layer and extending in the first direction, an upper magnetic track layer on the spacer layer and extending in the first direction, the upper magnetic track layer including a plurality of second magnetic domains, and a plurality of read units on the upper magnetic track layer and arranged apart from one another in the first direction, wherein the plurality of first magnetic domains and the plurality of second magnetic domains have magnetization directions parallel to each other at positions overlapping each other in a second direction perpendicular to the first direction.