-
公开(公告)号：US12119036B2
公开(公告)日：2024-10-15
申请号：US18096089
申请日：2023-01-12
CPC分类号： G11C11/1673 , G11C11/1675 , H10B61/00 , H10N50/80
摘要： A magnetic memory device may include a magnetic track, which is extended in a first direction, and a first electrode, which is provided at a biasing point of the magnetic track and is configured to apply a voltage to the magnetic track. The magnetic track includes a first region between a first end of the magnetic track and the biasing point and a second region between the biasing point and a second end of the magnetic track. The first electrode may be configured to cause a difference between a current density in the first region and a current density in the second region.
-
公开(公告)号：US20230298649A1
公开(公告)日：2023-09-21
申请号：US18096161
申请日：2023-01-12
CPC分类号： G11C11/1673 , H10B61/00 , G11C11/1675
摘要： A magnetic memory device includes a conductive line that extends in a first direction, and a magnetic track line that extends in the first direction on a top surface of the conductive line. The conductive line may include a first region having a first width in a second direction, and a second region having a second width in the second direction. The first direction and the second direction are parallel to the top surface of the conductive line and are perpendicular to each other. The second width may be greater than the first width. The magnetic track line includes first domains arranged in the first direction on the first region of the conductive line, and second domains arranged in the first direction on the second region of the conductive line. A size of each of the second domains may be less than a size of each of the first domains.
-
公开(公告)号：US20230274772A1
公开(公告)日：2023-08-31
申请号：US18096089
申请日：2023-01-12
CPC分类号： G11C11/1673 , G11C11/1675 , H10B61/00 , H10N50/80
摘要： A magnetic memory device may include a magnetic track, which is extended in a first direction, and a first electrode, which is provided at a biasing point of the magnetic track and is configured to apply a voltage to the magnetic track. The magnetic track includes a first region between a first end of the magnetic track and the biasing point and a second region between the biasing point and a second end of the magnetic track. The first electrode may be configured to cause a difference between a current density in the first region and a current density in the second region.
-
-
搜索结果
3 条记录 (耗时 0.012 秒)
