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    Wafer inspection apparatus
    3.
    发明授权
    Wafer inspection apparatus 有权

    公开(公告)号：US11264256B2

    公开(公告)日：2022-03-01

    申请号：US16849631

    申请日：2020-04-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jaehwang Jung ,  Gwangsik Park ,  Wookrae Kim ,  Juntaek Oh

    IPC: G01N21/21 ,  H01L21/67 ,  G02B27/28 ,  G02B27/42 ,  G02B27/30 ,  G01N21/25 ,  G01N21/27 ,  G01N21/88 ,  G01N21/95 ,  G02B27/10 ,  G06T7/00 ,  G01N21/17

    Abstract: Provided is a wafer inspection apparatus including a monochromator that extracts monochromatic light, a collimator that outputs the monochromatic light as parallel light, a first polarization assembly that polarizes the parallel light and radiates the polarized light to a wafer, an imaging optical system that condenses light reflected from the wafer, a spectroscope that splits the condensed light into a plurality of spectrums, a first lens that condenses the plurality of spectrums, a second polarization assembly that outputs the plurality of spectrums as a plurality of polarized lights having different diffraction orders and a difference of 90°, a second lens that condenses the plurality of polarized lights, a third polarization assembly that outputs common polarized light based on the plurality of polarized interfering with each other, a camera that generates a phase difference image based on the common polarized light, and a signal processor that analyzes the phase difference image.

    Inspection apparatus and method based on coherent diffraction imaging (CDI)
    5.
    发明授权
    Inspection apparatus and method based on coherent diffraction imaging (CDI) 有权

    公开(公告)号：US11275034B2

    公开(公告)日：2022-03-15

    申请号：US17022249

    申请日：2020-09-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyungwon Yun ,  Taewan Kim ,  Seungbeom Park ,  Jaehyeon Son ,  Myungjun Lee ,  Jaehwang Jung

    IPC: G01N21/956 ,  G01N21/45

    Abstract: An inspection apparatus includes: a light source that generates and outputs light; a stage on which an inspection target is arranged; an irradiation optical system that irradiates light from the light source to the inspection target; a detector that receives the light diffracted from the inspection target and generates diffraction image; and a detector moving device configured to move the detector on a z-axis, which is an optical axis of the light, and an x-y plane perpendicular to the z-axis. Furthermore, while the detector moves on the x-y plane and the z-axis through the detector moving device, the detector generates a plurality of the diffraction images with different positions on the x-y plane and the z-axis with respect to the inspection target, and thus simultaneously implements phase retrieval and super resolution of diffraction images.

    Semiconductor measurement apparatus
    6.
    发明授权
    Semiconductor measurement apparatus 有权

    公开(公告)号：US12222282B2

    公开(公告)日：2025-02-11

    申请号：US18082040

    申请日：2022-12-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seoyeon Jeong ,  Seungwoo Lee ,  Inho Shin ,  Wookrae Kim ,  Myungjun Lee ,  Jaehwang Jung

    IPC: G01N21/21 ,  G01B11/24 ,  G01N21/956 ,  G02B27/28

    Abstract: A semiconductor measurement apparatus includes an illumination unit configured to provide illumination light including linearly polarized light beams having different wavelengths, an optical unit including an objective lens configured to allow the illumination light to be incident on a sample, the optical unit being configured to transmit reflection light generated when the illumination light is reflected from the sample, a self-interference generator configured to self-interfere the reflection light transmitted from the optical unit and transmit the reflection light to a first image sensor, for each wavelength, and a controller. The controller is configured to process a measurement image output by the image sensor to divide the measurement image into a first image representing an intensity ratio of a polarization component of the reflection light and a second image representing a phase difference of the polarization component of the reflection light, for each wavelength.

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