公开(公告)号：US10742075B2

公开(公告)日：2020-08-11

申请号：US15823889

申请日：2017-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooram Lee ,  Kyoungwon Kim ,  Seho Park ,  Chang-Hak O ,  Kyeongjun Kim ,  Kihyun Kim ,  Yunjeong Noh ,  Jae-Wan Park ,  Hyungkoo Chung

IPC: H02J7/00 ,  H02J50/70 ,  H02J50/80 ,  H02J50/12 ,  H02J7/02 ,  H02M7/5387

Abstract: An electronic device according to one embodiment of the present disclosure includes a conductive coil, a power generation circuit, and one or more processors operatively connected to the power generation circuit and may be configured to: compare an amount of transmission power to be supplied to a power reception device with designated threshold power amount, determine a designated frequency to be a frequency of a control signal for controlling the power generation circuit when the amount of transmission power is equal to or less than the designated threshold power amount, determine a phase of the control signal based at least in part on the amount of transmission power and/or the designated frequency when the designated frequency is determined to be the frequency of the control signal, transmit the control signal having the designated frequency and the phase to the power generation circuit to generate, based at least in part on the control signal, transmission power corresponding to the amount of transmission power, and supply the transmission power generated by the power generation circuit to the power reception device wirelessly via the conductive coil.

公开(公告)号：US11233422B2

公开(公告)日：2022-01-25

申请号：US16640017

申请日：2018-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mincheol Ha ,  Dongzo Kim ,  Ji-Won Kim ,  Jae-Wan Park ,  Chang-Hak O ,  Jongchul Hong ,  Yong Sang Yun

IPC: H02J50/00 ,  H02J50/80 ,  H02J50/12

Abstract: According to various embodiments, provided is an electronic device, which comprises a housing and a relay circuit located inside the housing and is capable of receiving and/or retransmitting an electromagnetic field of an external electronic device, wherein the relay circuit is configured to form a resonant frequency higher than that of an operating frequency range of the electromagnetic field transmitted by the external electronic device. Additional various embodiments are possible.

公开(公告)号：US10995269B2

公开(公告)日：2021-05-04

申请号：US15816699

申请日：2017-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Woo Lee ,  Hoon Han ,  Keon-Young Kim ,  Jung-Hun Lim ,  Jin-Uk Lee ,  Jae-Wan Park

IPC: C09K13/08 ,  H01L27/1157 ,  H01L21/311 ,  H01L27/11582 ,  C09K13/06

Abstract: An etchant composition includes an inorganic acid, a siloxane compound, an ammonium compound, and a solvent, wherein the siloxane compound is represented by General Formula (I): A method of fabricating an integrated circuit device includes forming a structure on a substrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.

公开(公告)号：US20180142151A1

公开(公告)日：2018-05-24

申请号：US15816699

申请日：2017-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Woo Lee ,  Hoon Han ,  Keon-Young Kim ,  Jung-Hun Lim ,  Jin-Uk Lee ,  Jae-Wan Park

IPC: C09K13/08 ,  H01L21/311 ,  C09K13/06

CPC classification number: C09K13/08 ,  C09K13/06 ,  H01L21/31111 ,  H01L27/1157 ,  H01L27/11582

Abstract: An etchant composition includes an inorganic acid, a siloxane compound, an ammonium compound, and a solvent, wherein the siloxane compound is represented by General Formula (I): A method of fabricating an integrated circuit device includes forming a structure on a substrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.

公开(公告)号：US20150200112A1

公开(公告)日：2015-07-16

申请号：US14492122

申请日：2014-09-22

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Hoon Han ,  Byoung-Moon Yoon ,  Young-Taek Hong ,  Keon-Young Kim ,  Jun-Youl Yang ,  Young-Ok Kim ,  Tae-Heon Kim ,  Sun-Joong Song ,  Jung-Hun Lim ,  Jae-Wan Park ,  Jin-Uk Lee

IPC: H01L21/3213 ,  H01L29/423 ,  C23F1/16 ,  H01L21/02

CPC classification number: H01L21/32133 ,  C09K13/04 ,  C23F1/26 ,  H01L21/32115 ,  H01L21/32134 ,  H01L27/11582 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/66666 ,  H01L29/7827

Abstract: The present disclosure herein relates to methods of forming conductive patterns and to methods of manufacturing semiconductor devices using the same. In some embodiments, a method of forming a conductive pattern includes forming a first conductive layer and a second conductive layer on a substrate. The first conductive layer and the second conductive layer may include a metal nitride and a metal, respectively. The first conductive layer and the second conductive layer may be etched using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and a remainder of water. The etchant composition may have substantially the same etching rate for the metal nitride and the metal.

Abstract translation: 本公开内容涉及形成导电图案的方法以及使用其形成半导体器件的方法。 在一些实施例中，形成导电图案的方法包括在衬底上形成第一导电层和第二导电层。 第一导电层和第二导电层可以分别包括金属氮化物和金属。 可以使用包括磷酸，硝酸，辅助氧化剂和剩余的水的蚀刻剂组合物来蚀刻第一导电层和第二导电层。 蚀刻剂组合物可以具有与金属氮化物和金属基本相同的蚀刻速率。

公开(公告)号：US09530670B2

公开(公告)日：2016-12-27

申请号：US14492122

申请日：2014-09-22

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Hoon Han ,  Byoung-Moon Yoon ,  Young-Taek Hong ,  Keon-Young Kim ,  Jun-Youl Yang ,  Young-Ok Kim ,  Tae-Heon Kim ,  Sun-Joong Song ,  Jung-Hun Lim ,  Jae-Wan Park ,  Jin-Uk Lee

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/3213 ,  H01L29/423 ,  C09K13/04 ,  C23F1/26 ,  H01L21/321 ,  H01L27/115 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/32133 ,  C09K13/04 ,  C23F1/26 ,  H01L21/32115 ,  H01L21/32134 ,  H01L27/11582 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/66666 ,  H01L29/7827

Abstract: The present disclosure herein relates to methods of forming conductive patterns and to methods of manufacturing semiconductor devices using the same. In some embodiments, a method of forming a conductive pattern includes forming a first conductive layer and a second conductive layer on a substrate. The first conductive layer and the second conductive layer may include a metal nitride and a metal, respectively. The first conductive layer and the second conductive layer may be etched using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and a remainder of water. The etchant composition may have substantially the same etching rate for the metal nitride and the metal.

Abstract translation: 本公开内容涉及形成导电图案的方法以及使用其形成半导体器件的方法。 在一些实施例中，形成导电图案的方法包括在衬底上形成第一导电层和第二导电层。 第一导电层和第二导电层可以分别包括金属氮化物和金属。 可以使用包括磷酸，硝酸，辅助氧化剂和剩余的水的蚀刻剂组合物来蚀刻第一导电层和第二导电层。 蚀刻剂组合物可以具有与金属氮化物和金属基本相同的蚀刻速率。