公开(公告)号：US20160087702A1

公开(公告)日：2016-03-24

申请号：US14713731

申请日：2015-05-15

Applicant: Samsung Electronics Co., Ltd. ,  Industry-Academic Cooperation Foundation, Yonsei-University

Inventor： Ji-Hun KOO ,  Min-Joon KIM ,  Jang-Yong PARK ,  Hyuk-Yeon LEE ,  Jae-Seok KIM

IPC: H04B7/04 ,  H04W52/02

CPC classification number: H04W52/0219 ,  H04B7/0452 ,  H04B7/0465 ,  H04J11/0023 ,  H04W52/0238 ,  H04W52/0274 ,  Y02D70/00 ,  Y02D70/122 ,  Y02D70/1244 ,  Y02D70/1246 ,  Y02D70/1262 ,  Y02D70/1264 ,  Y02D70/142 ,  Y02D70/146 ,  Y02D70/164 ,  Y02D70/168 ,  Y02D70/26 ,  Y02D70/444

Abstract: A method of canceling interference by a signal receiving apparatus in a communication system supporting a multi-user Multiple-Input Multiple-Output (MIMO) scheme and a signal receiving apparatus is provided. The method includes determining whether there is a need for using an interference cancellation scheme while performing a signal detecting operation; and performing the signal detecting operation using the interference cancellation scheme, or performing the signal detecting operation without using the interference cancellation scheme based on determining whether there is the need for using the interference cancellation scheme.

Abstract translation: 提供一种在支持多用户多输入多输出（MIMO）方式和信号接收装置的通信系统中消除信号接收装置的干扰的方法。 该方法包括：在执行信号检测操作时确定是否需要使用干扰消除方案; 以及使用干扰消除方案执行信号检测操作，或者基于确定是否需要使用干扰消除方案，而不使用干扰消除方案来执行信号检测操作。

公开(公告)号：US20150294899A1

公开(公告)日：2015-10-15

申请号：US14751011

申请日：2015-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Chul KIM ,  Jae-Seok KIM ,  Chan-Hong PARK

IPC: H01L21/762 ,  H01L29/40 ,  H01L21/311 ,  H01L29/66 ,  H01L21/285

CPC classification number: H01L21/76224 ,  H01L21/28556 ,  H01L21/31111 ,  H01L21/76232 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/78

Abstract: A device isolation layer of the memory device includes a first insulation layer in a lower portion of a device isolation trench, a second insulation layer in an upper portion of the device isolation trench and a separation layer between the first insulation layer and the second insulation layer. First and second conductive fillers are in the first and second insulation layers and are separated by the separation layer.

Abstract translation: 存储器件的器件隔离层包括在器件隔离沟槽的下部中的第一绝缘层，器件隔离沟槽的上部中的第二绝缘层和第一绝缘层与第二绝缘层之间的分离层 。 第一和第二导电填料位于第一和第二绝缘层中，并被分离层分离。

公开(公告)号：US20140117459A1

公开(公告)日：2014-05-01

申请号：US14027372

申请日：2013-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Chul KIM ,  Jae-Seok KIM ,  Chan-Hong PARK

IPC: H01L29/78

CPC classification number: H01L21/76224 ,  H01L21/28556 ,  H01L21/31111 ,  H01L21/76232 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/78

Abstract: A device isolation layer of the memory device includes a first insulation layer in a lower portion of a device isolation trench, a second insulation layer in an upper portion of the device isolation trench and a separation layer between the first insulation layer and the second insulation layer. First and second conductive fillers are in the first and second insulation layers and are separated by the separation layer.

Abstract translation: 存储器件的器件隔离层包括在器件隔离沟槽的下部中的第一绝缘层，器件隔离沟槽的上部中的第二绝缘层和第一绝缘层与第二绝缘层之间的分离层 。 第一和第二导电填料位于第一和第二绝缘层中，并被分离层分离。