公开(公告)号：US20150294899A1

公开(公告)日：2015-10-15

申请号：US14751011

申请日：2015-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Chul KIM ,  Jae-Seok KIM ,  Chan-Hong PARK

IPC: H01L21/762 ,  H01L29/40 ,  H01L21/311 ,  H01L29/66 ,  H01L21/285

CPC classification number: H01L21/76224 ,  H01L21/28556 ,  H01L21/31111 ,  H01L21/76232 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/78

Abstract: A device isolation layer of the memory device includes a first insulation layer in a lower portion of a device isolation trench, a second insulation layer in an upper portion of the device isolation trench and a separation layer between the first insulation layer and the second insulation layer. First and second conductive fillers are in the first and second insulation layers and are separated by the separation layer.

Abstract translation: 存储器件的器件隔离层包括在器件隔离沟槽的下部中的第一绝缘层，器件隔离沟槽的上部中的第二绝缘层和第一绝缘层与第二绝缘层之间的分离层 。 第一和第二导电填料位于第一和第二绝缘层中，并被分离层分离。

公开(公告)号：US20140117459A1

公开(公告)日：2014-05-01

申请号：US14027372

申请日：2013-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Chul KIM ,  Jae-Seok KIM ,  Chan-Hong PARK

IPC: H01L29/78

CPC classification number: H01L21/76224 ,  H01L21/28556 ,  H01L21/31111 ,  H01L21/76232 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/78

Abstract: A device isolation layer of the memory device includes a first insulation layer in a lower portion of a device isolation trench, a second insulation layer in an upper portion of the device isolation trench and a separation layer between the first insulation layer and the second insulation layer. First and second conductive fillers are in the first and second insulation layers and are separated by the separation layer.

Abstract translation: 存储器件的器件隔离层包括在器件隔离沟槽的下部中的第一绝缘层，器件隔离沟槽的上部中的第二绝缘层和第一绝缘层与第二绝缘层之间的分离层 。 第一和第二导电填料位于第一和第二绝缘层中，并被分离层分离。