公开(公告)号：US20230187446A1

公开(公告)日：2023-06-15

申请号：US18082617

申请日：2022-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Seok JO ,  Jae-Hyun LEE ,  Jong-Han LEE ,  Hong-Bae PARK ,  Dong-Soo LEE

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L27/0924 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/823864 ,  H01L29/7851 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L21/823871 ,  H01L29/517

Abstract: A semiconductor device may include a plurality of first active fins protruding from a substrate, each of the first active fins extending in a first direction; a second active fin protruding from the substrate; and a plurality of respective first fin-field effect transistors (finFETs) on the first active fins. Each of the first finFETs includes a first gate structure extending in a second direction perpendicular to the first direction, and the first gate structure includes a first gate insulation layer and a first gate electrode. The first finFETs are formed on a first region of the substrate and have a first metal oxide layer as the first gate insulation layer, and a second finFET is formed on the second active fin on a second region of the substrate, and the second finFET does not include a metal oxide layer, but includes a second gate insulation layer that has a bottom surface at the same plane as a bottom surface of the first metal oxide layer.

公开(公告)号：US20150061161A1

公开(公告)日：2015-03-05

申请号：US14467597

申请日：2014-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-kyung LEE ,  Byoung-lyong CHOI ,  Won-Jae JOO ,  Byung-Sung KIM ,  Jae-Hyun LEE ,  Jong-Woon LEE ,  Dong-Mok WHANG

IPC: H01L23/00 ,  H01B5/00 ,  H01B1/04

CPC classification number: H01L24/45 ,  H01B1/04 ,  H01L24/43 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45186 ,  H01L2224/45193 ,  H01L2224/45663 ,  H01L2224/45693 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/00 ,  H01L2924/01006 ,  H01L2924/00014

Abstract: According to example embodiments, a wire structure includes a first wire that includes a first wire core and a first carbon shell surrounding the first wire core, and a second wire that extends in a longitudinal direction from the first wire. The first wire core has a wire shape. The first carbon shell contains carbon.

Abstract translation: 根据示例性实施例，线结构包括第一线，其包括第一线芯和围绕第一线芯的第一碳壳，以及沿着纵向方向从第一线延伸的第二线。 第一线芯具有线形。 第一个碳壳含有碳。