公开(公告)号：US09741854B2

公开(公告)日：2017-08-22

申请号：US14959457

申请日：2015-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun Hee Bai ,  Kyoung Hwan Yeo ,  Seung Seok Ha ,  Seung Ju Park ,  Do Hyoung Kim ,  Myeong Cheol Kim ,  Jae Hyoung Koo ,  Ki Byung Park

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/66 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66818 ,  H01L29/7851

Abstract: There is provided a method for manufacturing a semiconductor device including a substrate including a plurality of active regions, a plurality of gate electrodes extending in a first direction to intersect a portion of the plurality of active regions, and including first and second gate electrodes disposed to be adjacent to each other in the first direction, a gate isolation portion disposed between the first and second gate electrodes. The gate isolation portion includes a first layer and second layers disposed on both ends of the first layer in a second direction perpendicular to the first direction.