SEMICONDUCTOR MEMORY DEVICE
    1.
    发明公开

    公开(公告)号:US20240349492A1

    公开(公告)日:2024-10-17

    申请号:US18543279

    申请日:2023-12-18

    CPC classification number: H10B12/485 H10B12/02 H10B12/315 H10B12/34

    Abstract: A semiconductor memory device include first and second active patterns extending in a first direction and spaced apart from each other in a second direction crossing the first direction. The first and second active patterns include a first and second edge portions spaced apart from each other in the first direction, and a center portion therebetween. Bit line node contacts are on the center portions. Bit lines are on the bit line node contacts and extend in a third direction crossing the first and second directions. The center portions of the first and second active patterns are sequentially disposed in the second direction. Each of the bit line node contacts has a first width at a level of a top surface, a second width at a level of a bottom surface, and a third width between the top and bottom surfaces less than the first and second widths.

    SEMICONDUCTOR DEVICE
    3.
    发明申请

    公开(公告)号:US20250016979A1

    公开(公告)日:2025-01-09

    申请号:US18616352

    申请日:2024-03-26

    Abstract: A semiconductor device may include first and second active patterns, first and second gate structures, a source/drain layer, a bit line structure, a contact plug structure, and a capacitor. The first and second active patterns are on a cell region and a peripheral circuit region of a substrate, respectively. The first gate structure extends through an upper portion of the first active pattern. The second gate structure is on an upper surface and an upper sidewall of the second active pattern. The source/drain layer is on a portion of the second active pattern that is adjacent to the second gate structure. The bit line structure is on a central portion of the first active pattern, and overlaps the second gate structure in a horizontal direction. The contact plug structure is on opposing end portions of the first active pattern. The capacitor is on the contact plug structure.

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