公开(公告)号：US10716755B2

公开(公告)日：2020-07-21

申请号：US16237913

申请日：2019-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngbeom Pyon ,  Kichul Park ,  Inkwon Kim ,  Ki Hoon Jang ,  Byoungho Kwon ,  Sangkyun Kim ,  Boun Yoon

IPC: H01L27/112 ,  H01L23/535 ,  H01L23/528 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582 ,  H01L21/768 ,  H01L27/11551 ,  H01L27/11578 ,  H01L21/02 ,  H01L23/538 ,  A61K9/06 ,  A61K45/06 ,  A61K9/00 ,  A61K31/197 ,  A61K47/10 ,  A61K47/12 ,  A61K47/20 ,  A61K47/32 ,  A61K47/44

Abstract: A semiconductor device includes a substrate, a peripheral structure, a lower insulating layer, and a stack. The substrate includes a peripheral circuit region and a cell array region. The peripheral structure is on the peripheral circuit region. The lower insulating layer covers the peripheral circuit region and the cell array region and has a protruding portion protruding from a flat portion. The stack is on the lower insulating layer and the cell array region, and includes upper conductive patterns and insulating patterns which are alternately and repeatedly stacked.

公开(公告)号：US20240318038A1

公开(公告)日：2024-09-26

申请号：US18610982

申请日：2024-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghwa Lee ,  Yearin Byun ,  Inkwon Kim

IPC: C09G1/02 ,  C07F5/00 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/321

CPC classification number: C09G1/02 ,  C07F5/003 ,  C09K3/1409 ,  H01L21/31053 ,  H01L21/3212

Abstract: Provided are a method of manufacturing a chemical mechanical polishing slurry and a method of manufacturing a semiconductor device using the same. The method of manufacturing a chemical mechanical polishing slurry includes mixing a first precursor including cerium and a second precursor in an aqueous solution, forming nanoclusters including cerium by a reaction (e.g., a synthesis reaction) between the first precursor and the second precursor, and forming a chemical mechanical polishing slurry by mixing at least one of a pH adjuster, deionized water, an inhibitor, a booster, and a dispersant with the nanoclusters.

公开(公告)号：US20240318037A1

公开(公告)日：2024-09-26

申请号：US18609795

申请日：2024-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yearin Byun ,  Eunock Kim ,  Suyeong Jung ,  Hyungoo Kong ,  Inkwon Kim ,  Sanghyun Park

IPC: C09G1/02 ,  H01L21/3205 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212 ,  H01L21/32051

Abstract: The present disclosure relates to slurry compositions used for chemical mechanical polishing of a metal film. An example slurry composition includes abrasive particles, deionized water, and an oxidizer. The oxidizer includes iodine, and is a temperature-sensitive oxidizer capable of controlling both a static etch rate and a removal rate of the metal film when a polishing temperature during the chemical mechanical polishing is about 5° C. to about 100° C.

公开(公告)号：US10177160B2

公开(公告)日：2019-01-08

申请号：US15661280

申请日：2017-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngbeom Pyon ,  Kichul Park ,  Inkwon Kim ,  Ki Hoon Jang ,  Byoungho Kwon ,  Sangkyun Kim ,  Boun Yoon

IPC: H01L21/00 ,  H01L23/528 ,  H01L27/112 ,  H01L23/535 ,  H01L27/11551 ,  H01L27/11578 ,  H01L21/768 ,  H01L21/02 ,  H01L23/538

Abstract: A semiconductor device includes a substrate, a peripheral structure, a lower insulating layer, and a stack. The substrate includes a peripheral circuit region and a cell array region. The peripheral structure is on the peripheral circuit region. The lower insulating layer covers the peripheral circuit region and the cell array region and has a protruding portion protruding from a flat portion. The stack is on the lower insulating layer and the cell array region, and includes upper conductive patterns and insulating patterns which are alternately and repeatedly stacked.