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    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
    3.
    发明申请
    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20230005948A1

    公开(公告)日：2023-01-05

    申请号：US17940441

    申请日：2022-09-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yong-Hoon SON ,  Jae Hoon KIM ,  Kwang-ho PARK ,  Hyunji SONG ,  Gyeonghee LEE ,  Seungjae JUNG

    IPC: H01L27/11573 ,  H01L27/1157 ,  H01L23/528 ,  H01L27/11565 ,  H01L23/522 ,  H01L27/11582

    Abstract: A semiconductor memory device is disclosed. The device includes a peripheral circuit structure on a substrate, a semiconductor layer on the peripheral circuit structure, an electrode structure on the semiconductor layer, the electrode structure including electrodes stacked on the semiconductor layer, a vertical channel structure penetrating the electrode structure and being connected to the semiconductor layer, a separation structure penetrating the electrode structure, extending in a first direction, and horizontally dividing the electrode of the electrode structure into a pair of electrodes, an interlayered insulating layer covering the electrode structure, and a through contact penetrating the interlayered insulating layer and being electrically connected to the peripheral circuit structure.

    ELECTRONIC DEVICE AND METHOD FOR DISPLAYING OBJECT ASSOCIATED WITH EXTERNAL ELECTRONIC DEVICE ON BASIS OF POSITION AND MOVEMENT OF EXTERNAL ELECTRONIC DEVICE
    4.
    发明申请
    ELECTRONIC DEVICE AND METHOD FOR DISPLAYING OBJECT ASSOCIATED WITH EXTERNAL ELECTRONIC DEVICE ON BASIS OF POSITION AND MOVEMENT OF EXTERNAL ELECTRONIC DEVICE 有权

    公开(公告)号：US20210239983A1

    公开(公告)日：2021-08-05

    申请号：US17059374

    申请日：2019-03-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyunji SONG ,  Wootaek SONG ,  Taekyung LEE

    IPC: G02B27/01 ,  G06F3/0346

    Abstract: An electronic device according to various embodiments of the present disclosure includes one or more cameras having a designated field of view, a display, a communication circuitry and a processor wherein the procesor is configured to identify an external electronic device among one or more external objects included in the designated field of view using the camera, display a graphic object corresponding to the external electronic device on the display based on first location information of the external electronic device identified based at least on the image information obtained using the camera, and when the external electronic device is out of the designated field of view, display the graphic object on the display based on second location information of the external electronic device identified using the camera before the external electronic device is out of the designated field of view and information related to the movement of the external electronic device received from the external electronic via the communication circuitry after the external electronic device is out of the designated field of view.

    SEMICONDUCTOR MEMORY DEVICE
    6.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20210125991A1

    公开(公告)日：2021-04-29

    申请号：US16923572

    申请日：2020-07-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae Hoon KIM ,  Kwang-Ho PARK ,  Yong-Hoon SON ,  Hyunji SONG ,  Gyeonghee LEE ,  Seungjae JUNG

    IPC: H01L27/108 ,  G11C11/4097

    Abstract: A semiconductor memory device may include a bit line extending in a first direction, a first conductive pattern extending in a second direction intersecting the first direction, a semiconductor pattern connecting the bit line and the first conductive pattern, a second conductive pattern including an insertion portion in the first conductive pattern, and a dielectric layer between the first conductive pattern and the second conductive pattern. The insertion portion of the second conductive pattern may have a width which increases as a distance from the semiconductor pattern increases.

    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
    7.
    发明申请
    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20210082941A1

    公开(公告)日：2021-03-18

    申请号：US16857507

    申请日：2020-04-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yong-Hoon SON ,  Jae Hoon KIM ,  Kwang-ho PARK ,  Hyunji SONG ,  Gyeonghee LEE ,  Seungjae JUNG

    IPC: H01L27/11573 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11565 ,  H01L23/522 ,  H01L23/528

    Abstract: A semiconductor memory device is disclosed. The device includes a peripheral circuit structure on a substrate, a semiconductor layer on the peripheral circuit structure, an electrode structure on the semiconductor layer, the electrode structure including electrodes stacked on the semiconductor layer, a vertical channel structure penetrating the electrode structure and being connected to the semiconductor layer, a separation structure penetrating the electrode structure, extending in a first direction, and horizontally dividing the electrode of the electrode structure into a pair of electrodes, an interlayered insulating layer covering the electrode structure, and a through contact penetrating the interlayered insulating layer and being electrically connected to the peripheral circuit structure.

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