公开(公告)号：US09536825B2

公开(公告)日：2017-01-03

申请号：US14712136

申请日：2015-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Wei-Hua Hsu ,  Choong-Ho Lee ,  Hyung-Jong Lee

IPC: H01L21/70 ,  H01L23/522 ,  H01L27/092 ,  H01L27/088 ,  H01L23/485 ,  H01L23/532

CPC classification number: H01L23/5226 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L27/088 ,  H01L27/0883 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed on the first region and the second region, respectively, a first contact formed on the first transistor, and a second contact formed on the second transistor. The first contact includes a first work function control layer having a first thickness and a first conductive layer formed on the first work function control layer, the second contact includes a second work function control layer having a second thickness different from the first thickness and a second conductive layer formed on the second work function control layer, and the first contact and the second contact have different work functions.

Abstract translation: 提供半导体器件及其制造方法。 该半导体器件包括分别包括第一区域和第二区域的基板，分别形成在第一区域和第二区域上的第一晶体管和第二晶体管，形成在第一晶体管上的第一触点和形成在第一晶体管上的第二触点 第二晶体管。 第一触点包括具有第一厚度的第一功函数控制层和形成在第一功函数控制层上的第一导电层，第二触点包括具有不同于第一厚度的第二厚度的第二功函数控制层， 导电层形成在第二功函数控制层上，第一触点和第二触点具有不同的功能。

公开(公告)号：US10276570B2

公开(公告)日：2019-04-30

申请号：US15944956

申请日：2018-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gun You ,  Hyung-Jong Lee ,  Sung-Min Kim ,  Chong-Kwang Chang

IPC: H01L27/088 ,  H01L29/06 ,  H01L23/485 ,  H01L23/532 ,  H01L23/528

Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

公开(公告)号：US09941281B2

公开(公告)日：2018-04-10

申请号：US15409033

申请日：2017-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gun You ,  Hyung-Jong Lee ,  Sung-Min Kim ,  Chong-Kwang Chang

IPC: H01L27/088 ,  H01L23/485 ,  H01L23/528 ,  H01L23/532 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L23/485 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/0649

Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

公开(公告)号：US09553089B2

公开(公告)日：2017-01-24

申请号：US14995457

申请日：2016-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gun You ,  Hyung-Jong Lee ,  Sung-Min Kim ,  Chong-Kwang Chang

IPC: H01L27/088 ,  H01L23/528 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L23/485 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/0649

Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

Abstract translation: 一种半导体器件，包括由第一沟槽分隔的第一和第二鳍状图案; 与第一和第二鳍状图案相交的栅电极; 以及在所述栅极电极的至少一侧上的触点，所述触点接触所述第一鳍状图案，所述触点具有不接触所述第二鳍状图案的底表面，从所述第一沟槽的底部到最顶端的高度 在第一鳍状物的第一鳍状物与第一鳍状物的第一高度相交的区域中的第一鳍状图案和从第一沟槽的底部到第二鳍状图案的最上端的高度， 沿着栅极延伸的方向延伸的接触部将第二翅片图案与第二高度相交，第一高度小于第二高度。