公开(公告)号：US10804304B2

公开(公告)日：2020-10-13

申请号：US16114453

申请日：2018-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-pil Noh ,  Chang-keun Lee ,  Je-won Yu ,  Kang-sun Lee

IPC: H01L27/146

Abstract: Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region and an optical black region. The image sensor includes a plurality of photoelectric conversion regions in the pixel region. The image sensor includes a wiring structure on a first surface of the semiconductor substrate. The image sensor includes a light shielding layer on a second surface of the semiconductor substrate in the optical black region. Moreover, the image sensor includes a light shielding wall structure that is in the semiconductor substrate between the pixel region and the optical black region and that is connected to the light shielding layer.

公开(公告)号：US20160027828A1

公开(公告)日：2016-01-28

申请号：US14799110

申请日：2015-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-ha Lee ,  Hyun-pil Noh

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14616 ,  H01L27/14636 ,  H01L27/14643

Abstract: Image sensors are provided. The image sensors can include a photodiode in a substrate configured to generate signal charges based on incident light, a charge storage unit positioned at a side of the photodiode configured to temporarily store the signal charges generated by the photodiode, and a shield metal on the charge storage unit and on the substrate.

Abstract translation: 提供图像传感器。 图像传感器可以包括在被配置为基于入射光产生信号电荷的基板中的光电二极管，位于光电二极管的一侧的电荷存储单元，其被配置为临时存储由光电二极管产生的信号电荷以及电荷上的屏蔽金属 存储单元和基板上。

公开(公告)号：US09330981B2

公开(公告)日：2016-05-03

申请号：US14460081

申请日：2014-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Hyun-pil Noh ,  Choong-ho Lee ,  Seog-heon Ham

IPC: H01L21/77 ,  H01L21/8236 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/66 ,  H01L27/00 ,  H01L25/00

CPC classification number: H01L21/8236 ,  H01L21/77 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823462 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823857 ,  H01L25/00 ,  H01L27/00 ,  H01L27/0883 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.

Abstract translation: 提供了包括高压晶体管和低压晶体管的半导体器件及其制造方法。 半导体器件包括：包括高电压区域和低电压区域的半导体衬底; 形成在高电压区域中并包括第一有源区，第一源极/漏极区，第一栅极绝缘层和第一栅电极的高压晶体管; 以及形成在所述低电压区域中并包括第二有源区，第二源极/漏极区，第二栅极绝缘层和第二栅电极的低电压晶体管。 第二源极/漏极区域的厚度小于第一源极/漏极区域的厚度。

公开(公告)号：US20190221597A1

公开(公告)日：2019-07-18

申请号：US16114453

申请日：2018-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-pil Noh ,  Chang-keun Lee ,  Je-won Yu ,  Kang-sun Lee

IPC: H01L27/146

Abstract: Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region and an optical black region. The image sensor includes a plurality of photoelectric conversion regions in the pixel region. The image sensor includes a wiring structure on a first surface of the semiconductor substrate. The image sensor includes a light shielding layer on a second surface of the semiconductor substrate in the optical black region. Moreover, the image sensor includes a light shielding wall structure that is in the semiconductor substrate between the pixel region and the optical black region and that is connected to the light shielding layer.