公开(公告)号：US09812559B2

公开(公告)日：2017-11-07

申请号：US15236726

申请日：2016-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-In Choi ,  Bong-Soo Kim ,  Hyun-Seung Kim ,  Hyun-Gi Hong

IPC: H01L29/66 ,  H01L21/225 ,  H01L29/08 ,  H01L21/02 ,  H01L29/78

CPC classification number: H01L29/66803 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/2255 ,  H01L21/2256 ,  H01L29/0847 ,  H01L29/66492 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: Provided are a semiconductor device and a method of fabricating the same. The method comprises forming an active fin extending along a first direction; forming a field insulating layer exposing an upper part of the active fin, along long sides of the active fin; forming a dummy gate pattern extending along a second direction intersecting the first direction, on the active fin; forming a spacer on at least one side of the dummy gate pattern; forming a liner layer covering the active fin exposed by the spacer and the dummy gate pattern; forming a dopant supply layer containing a dopant element, on the liner layer; and forming a doped region in the active fin along an upper surface of the active fin by heat-treating the dopant supply layer.