公开(公告)号：US20240309298A1

公开(公告)日：2024-09-19

申请号：US18413777

申请日：2024-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyung CHO ,  Minju IM ,  Hyojoong YOON ,  Mihyun PARK ,  Jinhye BAE ,  Taekyung LEE ,  Sangwon BAE

IPC: C11D3/20 ,  C11D3/30 ,  C11D3/39 ,  G03F7/42 ,  H01L21/02

CPC classification number: C11D3/201 ,  C11D3/2017 ,  C11D3/2068 ,  C11D3/30 ,  C11D3/3927 ,  G03F7/425 ,  H01L21/02071 ,  C11D2111/22

Abstract: A stripper composition may include a polar organic solvent, a pH-adjusting agent, and an ammonium salt or a diamine compound, and deionized water (DIW). In the diamine compound, a main chain between amines may have 4 or fewer carbon atoms.

公开(公告)号：US20240288785A1

公开(公告)日：2024-08-29

申请号：US18585900

申请日：2024-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungah KIM ,  Jimin CHUN ,  Hyojoong YOON ,  Yonghwan CHO ,  Junyoul CHOI ,  Sangwon BAE

IPC: G03F7/00 ,  C11D7/08 ,  C11D7/10 ,  C11D7/26 ,  G03F1/22

CPC classification number: G03F7/70925 ,  C11D7/08 ,  C11D7/105 ,  C11D7/265 ,  G03F1/22 ,  G03F7/70033

Abstract: Described is a cleaning composition including an inorganic acid or salt thereof and an organic acid, wherein the organic acid has a first acid dissociation constant (PKa1) and a second acid dissociation constant (PKa2). PKa1 is less than PKa2, and PKa1 is from about 1 to about 3, and PKa2 is from about 4 to about 7.

公开(公告)号：US20240263072A1

公开(公告)日：2024-08-08

申请号：US18354055

申请日：2023-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heesuk WOO ,  Kyusang AHN ,  Jung-Min OH ,  Jiwon KIM ,  Jinkyu ROH ,  Hyojoong YOON ,  Sang Won BAE ,  Kyungmo SUNG

IPC: C09K13/08 ,  H01L21/306

CPC classification number: C09K13/08 ,  H01L21/30604

Abstract: The present disclosure relates to an etchant composition for etching silicon and silicon germanium, and/or a preparation method of a pattern using the etchant composition. The etchant composition may include an oxidizing agent, a fluorine-based compound, a surfactant represented by Chemical Formula 1 or 2, and water. The etchant composition may include the surfactant in an amount of 5% to 40% by weight based on 100% by weight of the etchant composition.

公开(公告)号：US20200216757A1

公开(公告)日：2020-07-09

申请号：US16734789

申请日：2020-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changsu JEON ,  Jungmin OH ,  Hyosan LEE ,  Hoon HAN ,  Jinkyu ROH ,  Hyojoong YOON ,  Dongwun SHIN

IPC: C09K13/00 ,  H01L21/02 ,  H01L21/311

Abstract: A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant composition.

公开(公告)号：US20200208052A1

公开(公告)日：2020-07-02

申请号：US16728276

申请日：2019-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kihun SONG ,  Jungmin OH ,  Hyosan LEE ,  Daehyuk CHUNG ,  Minjung KIM ,  Hyojoong YOON

IPC: C09K13/06 ,  H01L21/311

Abstract: An etchant composition for etching a metal film and a method of forming a pattern, the etchant composition including an acid etching agent, the acid etching agent including an inorganic acid or an organic acid; an auxiliary oxidant, the auxiliary oxidant including hydrogen peroxide or an amine oxide compound; and an organic solvent, the organic solvent including a compound having an unshared electron pair, and having a dielectric constant of about 17 to about 80.