公开(公告)号：US20240263072A1

公开(公告)日：2024-08-08

申请号：US18354055

申请日：2023-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heesuk WOO ,  Kyusang AHN ,  Jung-Min OH ,  Jiwon KIM ,  Jinkyu ROH ,  Hyojoong YOON ,  Sang Won BAE ,  Kyungmo SUNG

IPC: C09K13/08 ,  H01L21/306

CPC classification number: C09K13/08 ,  H01L21/30604

Abstract: The present disclosure relates to an etchant composition for etching silicon and silicon germanium, and/or a preparation method of a pattern using the etchant composition. The etchant composition may include an oxidizing agent, a fluorine-based compound, a surfactant represented by Chemical Formula 1 or 2, and water. The etchant composition may include the surfactant in an amount of 5% to 40% by weight based on 100% by weight of the etchant composition.

公开(公告)号：US20200216757A1

公开(公告)日：2020-07-09

申请号：US16734789

申请日：2020-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changsu JEON ,  Jungmin OH ,  Hyosan LEE ,  Hoon HAN ,  Jinkyu ROH ,  Hyojoong YOON ,  Dongwun SHIN

IPC: C09K13/00 ,  H01L21/02 ,  H01L21/311

Abstract: A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant composition.