公开(公告)号：US20230038110A1

公开(公告)日：2023-02-09

申请号：US17858921

申请日：2022-07-06

申请人： SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

发明人： Minyoung LEE ,  Hyungrang MOON ,  Ryunmin HEO ,  Minsoo KIM ,  Youngkwon KIM ,  Jaehyun KIM ,  Changsoo WOO ,  Jung Min CHOI ,  Moohyun KOH ,  Jungah KIM ,  Sungan DO ,  Sang Won BAE ,  Hoon HAN ,  SukKoo HONG

IPC分类号： G03F7/16 ,  G03F7/11

摘要： A composition for removing edge beads from a metal-containing resist, and a method of forming patterns including step of removing edge beads using the same are provided. The composition for removing edge beads from a metal-containing resist includes an organic solvent, and a heptagonal ring compound substituted with at least one hydroxyl group (—OH). The heptagonal ring compound has at least two double bonds in the ring.

公开(公告)号：US20230037563A1

公开(公告)日：2023-02-09

申请号：US17858924

申请日：2022-07-06

申请人： SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

发明人： Ryunmin HEO ,  Hyungrang MOON ,  Minyoung LEE ,  Minsoo KIM ,  Youngkwon KIM ,  Jaehyun KIM ,  Changsoo WOO ,  Jung Min CHOI ,  Moohyun KOH ,  Jungah KIM ,  Sungan DO ,  Sang Won BAE ,  Hoon HAN ,  SukKoo HONG

IPC分类号： G03F7/32

摘要： A metal-containing photoresist developer composition, and a method of forming patterns including a step of developing using the same are provided. The metal-containing photoresist developer composition includes an organic solvent, and a heptagonal ring compound substituted with at least one hydroxy group (—OH). The heptagonal ring compound has at least two double bonds in the ring.

公开(公告)号：US20140141616A1

公开(公告)日：2014-05-22

申请号：US14086426

申请日：2013-11-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sang Won BAE ,  Yongsun KO ,  Byoungho KWON ,  Bo yun KIM ,  Hongjin KIM ,  Sungoh PARK ,  Kuntack LEE ,  Hyosan LEE ,  Sol HAN

IPC分类号： H01L21/321 ,  H01L21/02

CPC分类号： C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

摘要： An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

摘要翻译： 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。

公开(公告)号：US20240263072A1

公开(公告)日：2024-08-08

申请号：US18354055

申请日：2023-07-18

申请人： Samsung Electronics Co., Ltd.

发明人： Heesuk WOO ,  Kyusang AHN ,  Jung-Min OH ,  Jiwon KIM ,  Jinkyu ROH ,  Hyojoong YOON ,  Sang Won BAE ,  Kyungmo SUNG

IPC分类号： C09K13/08 ,  H01L21/306

CPC分类号： C09K13/08 ,  H01L21/30604

摘要： The present disclosure relates to an etchant composition for etching silicon and silicon germanium, and/or a preparation method of a pattern using the etchant composition. The etchant composition may include an oxidizing agent, a fluorine-based compound, a surfactant represented by Chemical Formula 1 or 2, and water. The etchant composition may include the surfactant in an amount of 5% to 40% by weight based on 100% by weight of the etchant composition.

公开(公告)号：US20180148645A1

公开(公告)日：2018-05-31

申请号：US15809597

申请日：2017-11-10

申请人： Samsung Electronics Co., Ltd.

发明人： Hyo Sun LEE ,  Ho Young KIM ,  Sang Won BAE ,  Min Goo KIM ,  Jung Hun LIM ,  Yong Jae CHOI

IPC分类号： C09K13/06 ,  H01L21/311 ,  H01L21/3213

CPC分类号： C09K13/06 ,  C09K13/04 ,  C09K13/10 ,  H01L21/31111 ,  H01L21/32134

摘要： An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HNO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).

公开(公告)号：US20160368030A1

公开(公告)日：2016-12-22

申请号：US15142298

申请日：2016-04-29

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ingi KIM ,  Kyoung Hwan KIM ,  SeokHoon KIM ,  Sang Won BAE ,  Jung-Min OH ,  Kuntack LEE ,  Hyosan LEE

IPC分类号： B08B3/10 ,  B01F15/00 ,  H01L21/66 ,  H01L21/67 ,  H01L21/02 ,  B08B3/08 ,  B08B3/02

CPC分类号： H01L22/26 ,  B01F3/088 ,  B01F15/0022 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051

摘要： Disclosed is a substrate processing system including a nozzle to supply a chemical solution containing a mixture of first and second solutions onto a substrate loaded on a supporter of a process chamber, a chemical solution supplying system to supply the chemical solution to the nozzle, and a controller to control the chemical solution supplying system. The chemical solution supplying system may include a mixing tank mixing a plurality of chemicals to produce the first solution, a supply tank receiving the first solution from the mixing tank and producing the chemical solution, a connection line to connect the mixing tank to the supply tank, and a valve and a pump on the connection line. The pump is controlled to allow the first solution to be supplied into the supply tank at a predetermined supply amount per stroke.

摘要翻译： 公开了一种基板处理系统，其包括：喷嘴，其将含有第一和第二溶液的混合物的化学溶液供应到负载在处理室的支撑体上的基板上;将化学溶液供给到喷嘴的化学溶液供给系统;以及 控制器控制化学溶液供应系统。 化学溶液供给系统可以包括混合多种化学品以制备第一溶液的混合罐，从混合罐接收第一溶液并产生化学溶液的供应罐，将混合罐连接到供应罐的连接管线 ，以及连接线上的阀和泵。 控制泵以允许第一溶液以每冲程以预定的供给量供应到供应罐中。

公开(公告)号：US20160032185A1

公开(公告)日：2016-02-04

申请号：US14879835

申请日：2015-10-09

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sang Won BAE ,  Yongsun KO ,  Byoungho KWON ,  Bo yun KIM ,  Hongjin KIM ,  Sungoh PARK ,  Kuntack LEE ,  Hyosan LEE ,  Sol HAN

IPC分类号： C09K13/06 ,  C23F1/26

CPC分类号： C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

摘要： An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

摘要翻译： 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。

公开(公告)号：US20220320317A1

公开(公告)日：2022-10-06

申请号：US17693532

申请日：2022-03-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Chang Ju YEOM ,  Chang Su JEON ,  Jung Min OH ,  Sang Won BAE ,  Jae Sung LEE ,  Hyo San LEE ,  Jung Hun LIM

IPC分类号： H01L29/66 ,  H01L21/28 ,  H01L21/02

摘要： A method for manufacturing a semiconductor device, the method including forming a fin type pattern including a lower pattern and an upper pattern on a substrate, the upper pattern including a plurality of sacrificial layers and a plurality of sheet patterns alternately stacked on the lower pattern; forming a field insulating film on the substrate and the fin type pattern such that the field insulation film covers side walls of the lower pattern; forming a passivation film on the field insulating film such that the passivation film extends along an upper surface of the field insulating film; and removing the plurality of sacrificial layers after forming the passivation film.

公开(公告)号：US20220267673A1

公开(公告)日：2022-08-25

申请号：US17573734

申请日：2022-01-12

申请人： Samsung Electronics Co., Ltd. ,  DONGWOO FINE-CHEM CO., LTD.

发明人： Min Hyung CHO ,  Hyo Joong YOON ,  Min Ju IM ,  Jung Min OH ,  Sang Won BAE ,  Hyo San LEE

IPC分类号： C09K13/00 ,  H01L21/3213 ,  H01L21/768

摘要： Etching compositions are provided. The etching compositions can be used for etching cobalt. The etching compositions may include a chelator, water, an oxidizer, and an organic solvent, and the chelator may include an organic acid, an amine compound and/or a polyhydric alcohol. Water may be present in an amount of 1 wt % to 10 wt % based on a total weight of the etching composition.