公开(公告)号：US20240191389A1

公开(公告)日：2024-06-13

申请号：US18522817

申请日：2023-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeyun PARK ,  Inji LEE

IPC: C30B15/04 ,  C30B15/20 ,  C30B29/06 ,  C30B33/00

CPC classification number: C30B15/04 ,  C30B15/20 ,  C30B29/06 ,  C30B33/00

Abstract: A method of manufacturing a silicon single crystal includes preparing a silicon melt and growing the silicon single crystal based on co-doping boron and phosphorus into the silicon melt. The growing of the silicon single crystal includes controlling, a doping concentration ratio, which is a ratio of an initial concentration of phosphorus to an initial concentration of boron, to be a particular ratio and controlling the initial concentration of boron to be within a range of about 8.0E12 atom/cm3 to about 1.5E13 atom/cm3.

公开(公告)号：US20240405041A1

公开(公告)日：2024-12-05

申请号：US18639136

申请日：2024-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Ho KIM ,  Hyeyun PARK ,  Gijae KANG ,  Seonghoon KO ,  Jin Soak KIM ,  Wook LEE ,  Joohyun JEON ,  Guhyun KWON

IPC: H01L27/146

Abstract: An image sensor that includes a substrate including a photoelectric conversion region, a semiconductor pattern on the substrate, a gate electrode on the semiconductor pattern, and a gate insulating layer between the semiconductor pattern and the gate electrode. The semiconductor pattern includes a first sub pattern including a first source/drain region, a second sub pattern including a second source/drain region, and a third sub pattern between the first sub pattern and the second sub pattern. The gate electrode is on the third sub pattern. The first sub pattern, the second sub pattern, and the third sub pattern extend along different directions.

公开(公告)号：US20230357283A1

公开(公告)日：2023-11-09

申请号：US18218206

申请日：2023-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoshiaki OBANA ,  Hyeyun PARK ,  Sujin KWON ,  Shiyong YI ,  Junwon HAN ,  Hiroshi MORITA ,  Rieko HAMADA ,  Kouji IINO

IPC: C07F5/02 ,  H10K30/00 ,  H10K39/32 ,  H10K85/30 ,  H10K85/60

CPC classification number: C07F5/02 ,  C07F5/022 ,  H10K30/451 ,  H10K39/32 ,  H10K85/322 ,  H10K85/655 ,  H10K85/656 ,  H10K85/6576

Abstract: An organic compound, an organic photoelectric device, an image sensor, and an electronic device, the organic compound being represented by Chemical Formula 1:






wherein, in Chemical Formula 1, R1, R2, R3, R4, R5, and R6 are each independently a hydrogen atom, a substituted or unsubstituted C1-C4 alkyl group, a substituted or unsubstituted C1-C4 alkoxy group, or a substituted or unsubstituted C1-C4 alkylthio group, and A is a functional group including a heteroaryl group that includes at least one sulfur atom.

公开(公告)号：US20200251521A1

公开(公告)日：2020-08-06

申请号：US16857839

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Min LEE ,  Seokjin KWON ,  Hyeyun PARK ,  Beomsuk LEE ,  Dongmo IM

IPC: H01L27/146 ,  H04N5/374

Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.