公开(公告)号：US10177042B2

公开(公告)日：2019-01-08

申请号：US15193805

申请日：2016-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won-Keun Chung ,  Hu-Yong Lee ,  Taek-Soo Jeon ,  Sang-Jin Hyun

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/66 ,  H01L29/51

Abstract: A semiconductor device includes a first trench and a second trench, a liner pattern along a portion of side surfaces and along bottom surfaces of the first and the second trenches, respectively, a work function metal in the first and the second trenches and on the liner pattern, respectively, a first barrier metal in the first trench and on the work function metal, and having a first thickness, a second barrier metal in the second trench and on the work function metal, and having a second thickness thicker than the first thickness, and a first fill metal on the first barrier metal.

公开(公告)号：US11177364B2

公开(公告)日：2021-11-16

申请号：US16938495

申请日：2020-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung-Hoon Lee ,  Hoon-Joo Na ,  Sung-In Suh ,  Min-Woo Song ,  Chan-Hyeong Lee ,  Hu-Yong Lee ,  Sang-Jin Hyun

IPC: H01L29/49 ,  H01L29/06 ,  H01L29/45 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  H01L21/02 ,  H01L21/285 ,  H01L21/28 ,  H01L29/66

Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.

公开(公告)号：US10756195B2

公开(公告)日：2020-08-25

申请号：US16179250

申请日：2018-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung-Hoon Lee ,  Hoon-Joo Na ,  Sung-In Suh ,  Min-Woo Song ,  Chan-Hyeong Lee ,  Hu-Yong Lee ,  Sang-Jin Hyun

IPC: H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/08 ,  H01L21/02 ,  H01L21/30 ,  H01L29/78 ,  H01L21/3205 ,  H01L29/66

Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.