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公开(公告)号：US10177042B2
公开(公告)日：2019-01-08
申请号：US15193805
申请日：2016-06-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Won-Keun Chung , Hu-Yong Lee , Taek-Soo Jeon , Sang-Jin Hyun
IPC: H01L27/092 , H01L21/8238 , H01L29/49 , H01L29/66 , H01L29/51
Abstract: A semiconductor device includes a first trench and a second trench, a liner pattern along a portion of side surfaces and along bottom surfaces of the first and the second trenches, respectively, a work function metal in the first and the second trenches and on the liner pattern, respectively, a first barrier metal in the first trench and on the work function metal, and having a first thickness, a second barrier metal in the second trench and on the work function metal, and having a second thickness thicker than the first thickness, and a first fill metal on the first barrier metal.
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公开(公告)号：US09054189B1
公开(公告)日：2015-06-09
申请号：US14148110
申请日：2014-01-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-Bum Kim , Taek-Soo Jeon
CPC classification number: H01L29/7848 , H01L29/66795 , H01L29/785
Abstract: A semiconductor device is provided. An active fin protrudes from a substrate. A gate structure is formed on the substrate and the active fin. The gate structure extends in a first direction. The gate structure crosses a first region of the active fin in a second direction. A first epitaxial layer is formed on a second region of the active fin. The second region of the active fin is not covered with the gate structure. A second epitaxial layer is formed on the first epitaxial layer, the second epitaxial layer including an impurity. The first epitaxial layer includes a blocking material. The blocking material of the first epitaxial layer prevents the impurity of the second epitaxial layer from passing through the first epitaxial layer to block diffusion of the impurity to a channel region formed in the first region of the active fin.
Abstract translation: 提供半导体器件。 活性翅片从基底突出。 栅极结构形成在衬底和活性鳍上。 栅极结构沿第一方向延伸。 栅极结构沿着第二方向跨越有源鳍片的第一区域。 在活性鳍片的第二区域上形成第一外延层。 活动鳍片的第二区域不被栅极结构覆盖。 在第一外延层上形成第二外延层，第二外延层包括杂质。 第一外延层包括阻挡材料。 第一外延层的阻挡材料防止第二外延层的杂质通过第一外延层，以阻止杂质扩散到形成在活性鳍片的第一区域中的沟道区域。
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公开(公告)号：US20150011070A1
公开(公告)日：2015-01-08
申请号：US13934369
申请日：2013-07-03
Inventor： Jin-Bum Kim , Kyung-Bum Koo , Taek-Soo Jeon , Tae-Ho Cha , Judson R. Holt , Henry K. Utomo
IPC: H01L29/66
CPC classification number: H01L29/66636 , H01L21/823412 , H01L21/823418 , H01L29/165 , H01L29/66628 , H01L29/7834 , H01L29/7848
Abstract: A gate pattern is formed on a first region of a substrate. An epitaxial layer is formed on a second region of the substrate. A recess is formed in the second region of the substrate by etching the epitaxial layer and the substrate underneath. The first region is adjacent to the second region.
Abstract translation: 在衬底的第一区域上形成栅极图案。 在衬底的第二区域上形成外延层。 通过在其下方蚀刻外延层和衬底，在衬底的第二区域中形成凹部。 第一区域与第二区域相邻。
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公开(公告)号：US09412842B2
公开(公告)日：2016-08-09
申请号：US13934369
申请日：2013-07-03
Inventor： Jin-Bum Kim , Kyung-Bum Koo , Taek-Soo Jeon , Tae-Ho Cha , Judson R Holt , Henry K Utomo
IPC: H01L29/66 , H01L29/78 , H01L29/165 , H01L21/8234
CPC classification number: H01L29/66636 , H01L21/823412 , H01L21/823418 , H01L29/165 , H01L29/66628 , H01L29/7834 , H01L29/7848
Abstract: A gate pattern is formed on a first region of a substrate. An epitaxial layer is formed on a second region of the substrate. A recess is formed in the second region of the substrate by etching the epitaxial layer and the substrate underneath. The first region is adjacent to the second region.
Abstract translation: 在衬底的第一区域上形成栅极图案。 在衬底的第二区域上形成外延层。 通过在其下方蚀刻外延层和衬底，在衬底的第二区域中形成凹部。 第一区域与第二区域相邻。
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