公开(公告)号：US09580800B2

公开(公告)日：2017-02-28

申请号：US14600132

申请日：2015-01-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-Hoon Lee ,  June-Hee Lee ,  Geun-Woo Kim ,  Min-Woo Song ,  Seok-Jun Won

IPC: G01R31/26 ,  H01L21/66 ,  C23C16/44 ,  C23C16/32 ,  C23C16/34 ,  H01L21/67

CPC classification number: C23C16/4404 ,  C23C16/32 ,  C23C16/34 ,  G01B2210/56 ,  H01L21/67005

Abstract: A method for operating semiconductor manufacturing equipment is provided. The method includes forming a conductive thin film on an inner side surface of a reaction chamber and on a substrate in the reaction chamber, the conductive thin film including a first conductive material, and forming a particle preventive layer on the inner side surface of the reaction chamber in which the conductive thin film is formed.

Abstract translation: 提供了一种用于操作半导体制造设备的方法。 该方法包括在反应室的内侧表面和反应室中的基板上形成导电薄膜，所述导电薄膜包括第一导电材料，并且在反应的内侧表面上形成防颗粒层 其中形成导电薄膜。

公开(公告)号：US11177364B2

公开(公告)日：2021-11-16

申请号：US16938495

申请日：2020-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung-Hoon Lee ,  Hoon-Joo Na ,  Sung-In Suh ,  Min-Woo Song ,  Chan-Hyeong Lee ,  Hu-Yong Lee ,  Sang-Jin Hyun

IPC: H01L29/49 ,  H01L29/06 ,  H01L29/45 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  H01L21/02 ,  H01L21/285 ,  H01L21/28 ,  H01L29/66

Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.

公开(公告)号：US10756195B2

公开(公告)日：2020-08-25

申请号：US16179250

申请日：2018-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung-Hoon Lee ,  Hoon-Joo Na ,  Sung-In Suh ,  Min-Woo Song ,  Chan-Hyeong Lee ,  Hu-Yong Lee ,  Sang-Jin Hyun

IPC: H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/08 ,  H01L21/02 ,  H01L21/30 ,  H01L29/78 ,  H01L21/3205 ,  H01L29/66

Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.

公开(公告)号：US20190140066A1

公开(公告)日：2019-05-09

申请号：US16179250

申请日：2018-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung-Hoon Lee ,  HOON-JOO NA ,  SUNG-IN SUH ,  MIN-WOO SONG ,  CHAN-HYEONG LEE ,  HU-YONG LEE ,  SANG-JIN HYUN

IPC: H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/30 ,  H01L21/02

Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.