公开(公告)号：US20150252470A1

公开(公告)日：2015-09-10

申请号：US14600132

申请日：2015-01-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： BYOUNG-HOON LEE ,  JUNE-HEE LEE ,  GEUN-WOO KIM ,  MIN-WOO SONG ,  SEOK-JUN WON

IPC: C23C16/44 ,  C23C16/32 ,  C23C16/34 ,  H01L21/285

CPC classification number: C23C16/4404 ,  C23C16/32 ,  C23C16/34 ,  G01B2210/56 ,  H01L21/67005

Abstract: A method for operating semiconductor manufacturing equipment is provided. The method includes forming a conductive thin film on an inner side surface of a reaction chamber and on a substrate in the reaction chamber, the conductive thin film including a first conductive material, and forming a particle preventive layer on the inner side surface of the reaction chamber in which the conductive thin film is formed.

Abstract translation: 提供了一种用于操作半导体制造设备的方法。 该方法包括在反应室的内侧表面和反应室中的基板上形成导电薄膜，所述导电薄膜包括第一导电材料，并且在反应的内侧表面上形成防颗粒层 其中形成导电薄膜。

公开(公告)号：US20190140066A1

公开(公告)日：2019-05-09

申请号：US16179250

申请日：2018-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung-Hoon Lee ,  HOON-JOO NA ,  SUNG-IN SUH ,  MIN-WOO SONG ,  CHAN-HYEONG LEE ,  HU-YONG LEE ,  SANG-JIN HYUN

IPC: H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/30 ,  H01L21/02

Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.