公开(公告)号：US11862476B2

公开(公告)日：2024-01-02

申请号：US17076025

申请日：2020-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minhee Cho ,  Junsoo Kim ,  Ho Lee ,  Chankyung Kim ,  Hei Seung Kim ,  Jaehong Min ,  Sangwuk Park ,  Woo Bin Song ,  Sang Woo Lee

IPC: H01L21/34 ,  H10B12/00 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L21/34 ,  H01L21/02 ,  H01L21/28 ,  H10B12/053 ,  H10B12/31 ,  H10B12/482

Abstract: A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.

公开(公告)号：US20190296018A1

公开(公告)日：2019-09-26

申请号：US16185892

申请日：2018-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhee Cho ,  Junsoo Kim ,  Ho Lee ,  Chankyung Kim ,  Hei Seung Kim ,  Jaehong Min ,  Sangwuk Park ,  Woo Bin Song ,  Sang Woo Lee

IPC: H01L27/108

Abstract: A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.

公开(公告)号：US20210057417A1

公开(公告)日：2021-02-25

申请号：US17076025

申请日：2020-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minhee Cho ,  Junsoo Kim ,  Ho Lee ,  Chankyung Kim ,  Hei Seung Kim ,  Jaehong Min ,  Sangwuk Park ,  Woo Bin Song ,  Sang Woo Lee

IPC: H01L27/108

Abstract: A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.

公开(公告)号：US10854612B2

公开(公告)日：2020-12-01

申请号：US16185892

申请日：2018-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhee Cho ,  Junsoo Kim ,  Ho Lee ,  Chankyung Kim ,  Hei Seung Kim ,  Jaehong Min ,  Sangwuk Park ,  Woo Bin Song ,  Sang Woo Lee

IPC: H01L27/108

Abstract: A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.

公开(公告)号：US09318573B2

公开(公告)日：2016-04-19

申请号：US13973584

申请日：2013-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Wook Moon ,  Joong S. Jeon ,  Jung-hyun Lee ,  Nae-In Lee ,  Yeon-Sik Park ,  Hwa-Sung Rhee ,  Ho Lee ,  Se-Young Cho ,  Suk-Pil Kim

IPC: H01L21/02 ,  H01L29/66 ,  B82Y10/00 ,  H01L29/10 ,  H01L29/78 ,  H01L29/786 ,  H01L51/42 ,  H01L29/06 ,  B82Y15/00

CPC classification number: H01L29/66439 ,  B82Y10/00 ,  B82Y15/00 ,  H01L21/02365 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78684 ,  H01L29/78696 ,  H01L51/426 ,  H01L2221/1094

Abstract: A field effect transistor having at least one Ge nanorod and a method of manufacturing the field effect transistor are provided. The field effect transistor may include a gate insulation layer formed on a silicon substrate, at least one nanorod embedded in the gate insulation layer having both ends thereof exposed, a source electrode and a drain electrode connected to opposite sides of the at least one Ge nanorod, and a gate electrode formed on the gate insulation layer between the source electrode and the drain electrode.

Abstract translation: 提供具有至少一个Ge纳米棒的场效应晶体管和制造场效应晶体管的方法。 场效应晶体管可以包括形成在硅衬底上的栅极绝缘层，至少一个纳米棒，其嵌入在其两端露出的栅极绝缘层中，源电极和漏电极连接到至少一个Ge纳米棒的相对侧 以及形成在源电极和漏电极之间的栅极绝缘层上的栅电极。