公开(公告)号：US09318573B2

公开(公告)日：2016-04-19

申请号：US13973584

申请日：2013-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Wook Moon ,  Joong S. Jeon ,  Jung-hyun Lee ,  Nae-In Lee ,  Yeon-Sik Park ,  Hwa-Sung Rhee ,  Ho Lee ,  Se-Young Cho ,  Suk-Pil Kim

IPC: H01L21/02 ,  H01L29/66 ,  B82Y10/00 ,  H01L29/10 ,  H01L29/78 ,  H01L29/786 ,  H01L51/42 ,  H01L29/06 ,  B82Y15/00

CPC classification number: H01L29/66439 ,  B82Y10/00 ,  B82Y15/00 ,  H01L21/02365 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78684 ,  H01L29/78696 ,  H01L51/426 ,  H01L2221/1094

Abstract: A field effect transistor having at least one Ge nanorod and a method of manufacturing the field effect transistor are provided. The field effect transistor may include a gate insulation layer formed on a silicon substrate, at least one nanorod embedded in the gate insulation layer having both ends thereof exposed, a source electrode and a drain electrode connected to opposite sides of the at least one Ge nanorod, and a gate electrode formed on the gate insulation layer between the source electrode and the drain electrode.

Abstract translation: 提供具有至少一个Ge纳米棒的场效应晶体管和制造场效应晶体管的方法。 场效应晶体管可以包括形成在硅衬底上的栅极绝缘层，至少一个纳米棒，其嵌入在其两端露出的栅极绝缘层中，源电极和漏电极连接到至少一个Ge纳米棒的相对侧 以及形成在源电极和漏电极之间的栅极绝缘层上的栅电极。