公开(公告)号：US10964791B2

公开(公告)日：2021-03-30

申请号：US16014496

申请日：2018-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inchan Hwang ,  Heonjong Shin ,  Sunghun Jung ,  Doohyun Lee ,  Hwichan Jun ,  Hakyoon Ahn

IPC: H01L29/417 ,  H01L29/423 ,  H01L21/285 ,  H01L29/06 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/165 ,  H01L29/45 ,  H01L29/08 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device is disclosed. The semiconductor device may include a substrate including a first active pattern, the first active pattern vertically protruding from a top surface of the substrate, a first source/drain pattern filling a first recess, which is formed in an upper portion of the first active pattern, a first metal silicide layer on the first source/drain pattern, the first metal silicide layer including a first portion and a second portion, which are located on a first surface of the first source/drain pattern, and a first contact in contact with the second portion of the first metal silicide layer. A thickness of the first portion may be different from a thickness of the second portion.

公开(公告)号：US12148701B2

公开(公告)日：2024-11-19

申请号：US18594816

申请日：2024-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongsik Shin ,  Sanghyun Lee ,  Hakyoon Ahn ,  Seonghan Oh ,  Youngmook Oh

IPC: H01L23/532 ,  H01L21/308 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L29/66 ,  H01L49/02 ,  H01L29/165

Abstract: A semiconductor device including a metal pattern on a semiconductor substrate; an etch stop layer covering the metal pattern, the etch stop layer including a sequentially stacked first insulation layer, second insulation layer, and third insulation layer; an interlayer dielectric layer on the etch stop layer; and a contact plug penetrating the interlayer dielectric layer and the etch stop layer, the contact plug being connected to the metal pattern, wherein the first insulation layer includes a first insulating material that contains a metallic element and nitrogen, wherein the second insulation layer includes a second insulating material that contains carbon, and wherein the third insulation layer includes a third insulating material that does not contain a metallic element and carbon.

公开(公告)号：US11031340B2

公开(公告)日：2021-06-08

申请号：US16167717

申请日：2018-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hongsik Shin ,  Sanghyun Lee ,  Hakyoon Ahn ,  Seonghan Oh ,  Youngmook Oh

IPC: H01L23/58 ,  H01L23/532 ,  H01L21/768 ,  H01L29/66 ,  H01L21/308 ,  H01L27/088 ,  H01L49/02 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/165

Abstract: A semiconductor device including a metal pattern on a semiconductor substrate; an etch stop layer covering the metal pattern, the etch stop layer including a sequentially stacked first insulation layer, second insulation layer, and third insulation layer; an interlayer dielectric layer on the etch stop layer; and a contact plug penetrating the interlayer dielectric layer and the etch stop layer, the contact plug being connected to the metal pattern, wherein the first insulation layer includes a first insulating material that contains a metallic element and nitrogen, wherein the second insulation layer includes a second insulating material that contains carbon, and wherein the third insulation layer includes a third insulating material that does not contain a metallic element and carbon.

公开(公告)号：US20240250031A1

公开(公告)日：2024-07-25

申请号：US18594816

申请日：2024-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongsik Shin ,  Sanghyun Lee ,  Hakyoon Ahn ,  Seonghan Oh ,  Youngmook Oh

IPC: H01L23/532 ,  H01L21/308 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L29/165 ,  H01L29/66

CPC classification number: H01L23/53295 ,  H01L21/3083 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76846 ,  H01L21/76897 ,  H01L21/823475 ,  H01L27/0629 ,  H01L27/088 ,  H01L28/20 ,  H01L29/66545 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66636

Abstract: A semiconductor device including a metal pattern on a semiconductor substrate; an etch stop layer covering the metal pattern, the etch stop layer including a sequentially stacked first insulation layer, second insulation layer, and third insulation layer; an interlayer dielectric layer on the etch stop layer; and a contact plug penetrating the interlayer dielectric layer and the etch stop layer, the contact plug being connected to the metal pattern, wherein the first insulation layer includes a first insulating material that contains a metallic element and nitrogen, wherein the second insulation layer includes a second insulating material that contains carbon, and wherein the third insulation layer includes a third insulating material that does not contain a metallic element and carbon.

公开(公告)号：US11948888B2

公开(公告)日：2024-04-02

申请号：US17338787

申请日：2021-06-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongsik Shin ,  Sanghyun Lee ,  Hakyoon Ahn ,  Seonghan Oh ,  Youngmook Oh

IPC: H01L23/532 ,  H01L21/308 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L29/66 ,  H01L49/02 ,  H01L29/165

CPC classification number: H01L23/53295 ,  H01L21/3083 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76846 ,  H01L21/76897 ,  H01L21/823475 ,  H01L27/0629 ,  H01L27/088 ,  H01L28/20 ,  H01L29/66545 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66636

Abstract: A semiconductor device including a metal pattern on a semiconductor substrate; an etch stop layer covering the metal pattern, the etch stop layer including a sequentially stacked first insulation layer, second insulation layer, and third insulation layer; an interlayer dielectric layer on the etch stop layer; and a contact plug penetrating the interlayer dielectric layer and the etch stop layer, the contact plug being connected to the metal pattern, wherein the first insulation layer includes a first insulating material that contains a metallic element and nitrogen, wherein the second insulation layer includes a second insulating material that contains carbon, and wherein the third insulation layer includes a third insulating material that does not contain a metallic element and carbon.

公开(公告)号：US11538913B2

公开(公告)日：2022-12-27

申请号：US17175850

申请日：2021-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inchan Hwang ,  Heonjong Shin ,  Sunghun Jung ,  Doohyun Lee ,  Hwichan Jun ,  Hakyoon Ahn

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L21/285 ,  H01L29/06 ,  H01L27/092 ,  H01L29/08 ,  H01L21/8238 ,  H01L29/165 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device is disclosed. The semiconductor device may include a substrate including a first active pattern, the first active pattern vertically protruding from a top surface of the substrate, a first source/drain pattern filling a first recess, which is formed in an upper portion of the first active pattern, a first metal silicide layer on the first source/drain pattern, the first metal silicide layer including a first portion and a second portion, which are located on a first surface of the first source/drain pattern, and a first contact in contact with the second portion of the first metal silicide layer. A thickness of the first portion may be different from a thickness of the second portion.

公开(公告)号：US20190229062A1

公开(公告)日：2019-07-25

申请号：US16167717

申请日：2018-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hongsik Shin ,  Sanghyun Lee ,  Hakyoon Ahn ,  Seonghan Oh ,  Youngmook Oh

IPC: H01L23/532 ,  H01L21/768 ,  H01L29/66 ,  H01L21/308 ,  H01L27/088

Abstract: A semiconductor device including a metal pattern on a semiconductor substrate; an etch stop layer covering the metal pattern, the etch stop layer including a sequentially stacked first insulation layer, second insulation layer, and third insulation layer; an interlayer dielectric layer on the etch stop layer; and a contact plug penetrating the interlayer dielectric layer and the etch stop layer, the contact plug being connected to the metal pattern, wherein the first insulation layer includes a first insulating material that contains a metallic element and nitrogen, wherein the second insulation layer includes a second insulating material that contains carbon, and wherein the third insulation layer includes a third insulating material that does not contain a metallic element and carbon.