公开(公告)号：US10312341B2

公开(公告)日：2019-06-04

申请号：US15824083

申请日：2017-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-jin Lim ,  Gi-gwan Park ,  Weon-hong Kim

IPC: H01L29/49 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/51 ,  H01L27/088 ,  H01L29/423 ,  H01L27/092 ,  H01L21/8238

Abstract: An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.

公开(公告)号：US09728463B2

公开(公告)日：2017-08-08

申请号：US15209093

申请日：2016-07-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-jin Lim ,  Gi-gwan Park ,  Sang-yub Ie ,  Jong-han Lee ,  Jeong-hyuk Yim ,  Hye-ri Hong

IPC: H01L21/8234 ,  H01L29/66 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/823462 ,  H01L21/02123 ,  H01L21/02271 ,  H01L21/02318 ,  H01L21/02348 ,  H01L21/02356 ,  H01L21/02362 ,  H01L21/28185 ,  H01L21/3003 ,  H01L21/67207 ,  H01L29/66795

Abstract: Methods of manufacturing a semiconductor device are provided. The methods may include forming a fin-type active region protruding from a substrate and forming a gate insulating film covering a top surface and both sidewalls of the fin-type active region. The gate insulating film may include a high-k dielectric film. The methods may also include forming a metal-containing layer on the gate insulating film, forming a silicon capping layer containing hydrogen atoms on the metal-containing layer, removing a portion of the hydrogen atoms contained in the silicon capping layer, removing the silicon capping layer and at least a portion of the metal-containing layer, and forming a gate electrode on the gate insulating film. The gate electrode may cover the top surface and the both sidewalls of the fin-type active region.

公开(公告)号：US08970014B2

公开(公告)日：2015-03-03

申请号：US14020021

申请日：2013-09-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-jin Lim ,  Hyung-Suk Jung ,  Yun-Ki Choi

IPC: H01L29/02

CPC classification number: H01L29/02 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/28194 ,  H01L21/31604 ,  H01L29/513 ,  H01L29/517

Abstract: Semiconductor devices and methods of forming the semiconductor device are provided, the semiconductor devices including a first dielectric layer on a substrate, and a second dielectric layer on the first dielectric layer. The first dielectric layer has a carbon concentration lower than the second dielectric layer.

Abstract translation: 提供半导体器件和形成半导体器件的方法，所述半导体器件包括在衬底上的第一介电层和第一介电层上的第二电介质层。 第一电介质层的碳浓度低于第二电介质层。

公开(公告)号：US09859392B2

公开(公告)日：2018-01-02

申请号：US15269001

申请日：2016-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-jin Lim ,  Gi-gwan Park ,  Weon-hong Kim

IPC: H01L29/49 ,  H01L29/51 ,  H01L27/088 ,  H01L29/423 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L29/4966 ,  H01L21/82345 ,  H01L21/823842 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/092 ,  H01L29/42356 ,  H01L29/51 ,  H01L29/785

Abstract: An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.