公开(公告)号：US10686338B2

公开(公告)日：2020-06-16

申请号：US16473921

申请日：2017-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Won Lee ,  Na-Hyang Kim ,  Yong-Youn Kim ,  Soon Park ,  Eun-Hee Choi

IPC: H02J50/60 ,  H02J50/80 ,  H02J50/12 ,  H02J7/02 ,  H04B5/00 ,  H04W4/20

Abstract: According to various embodiments, an electronic device comprises: a near-field communication unit; and a control unit electrically connected to the near-field communication unit, wherein the control unit can be configured to detect whether a foreign object is located between the electronic device and a first electronic device by using the near-field communication unit before performing wireless charging with the first electronic device which provides power wirelessly.

公开(公告)号：US11769726B2

公开(公告)日：2023-09-26

申请号：US17744375

申请日：2022-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounggon Kang ,  Changbeom Kim ,  Dalhee Lee ,  Eun-Hee Choi

IPC: H01L21/00 ,  H01L23/528 ,  H01L23/522 ,  H01L29/78 ,  H01L27/092 ,  H01L27/02 ,  H01L27/118 ,  H01L29/423

CPC classification number: H01L23/528 ,  H01L23/5226 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0924 ,  H01L27/11807 ,  H01L29/7853 ,  H01L29/42392 ,  H01L2027/11864 ,  H01L2027/11866

Abstract: A semiconductor device includes a first gate electrode disposed on a substrate and extending in a first horizontal direction, a first gate contact and a dummy gate contact, which are spaced apart from each other in the first horizontal direction and are in contact with a top surface of the first gate electrode, a first interconnect line extending in a second horizontal direction and overlapping the first gate contact in a vertical direction with respect to the upper surface of the substrate, and a voltage generator configured to generate a first voltage and apply the first voltage to the first gate electrode via the first interconnect line and the first gate contact. The first gate electrode receives the first voltage via the first interconnect line and the first gate contact from the voltage generator. The dummy gate contact receives the first voltage via the first gate electrode.

公开(公告)号：US11362032B2

公开(公告)日：2022-06-14

申请号：US16919670

申请日：2020-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounggon Kang ,  Changbeom Kim ,  Dalhee Lee ,  Eun-Hee Choi

IPC: H01L21/00 ,  H01L23/528 ,  H01L23/522 ,  H01L29/78 ,  H01L27/092 ,  H01L27/02 ,  H01L27/118 ,  H01L29/423

Abstract: A semiconductor device includes a first gate electrode disposed on a substrate and extending in a first horizontal direction, a first gate contact and a dummy gate contact, which are spaced apart from each other in the first horizontal direction and are in contact with a top surface of the first gate electrode, a first interconnect line extending in a second horizontal direction and overlapping the first gate contact in a vertical direction with respect to the upper surface of the substrate, and a voltage generator configured to generate a first voltage and apply the first voltage to the first gate electrode via the first interconnect line and the first gate contact. The first gate electrode receives the first voltage via the first interconnect line and the first gate contact from the voltage generator. The dummy gate contact receives the first voltage via the first gate electrode.

公开(公告)号：US09848077B2

公开(公告)日：2017-12-19

申请号：US14722467

申请日：2015-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-Hee Choi

IPC: H04B5/00 ,  H04M3/38 ,  H04M1/73 ,  H04M1/725 ,  G06Q20/32

CPC classification number: H04M1/73 ,  G06Q20/3229 ,  G06Q20/3278 ,  H04M1/72519 ,  H04M1/72522 ,  H04M1/7253 ,  H04M2250/04

Abstract: A method is provided including: sensing that a reader is located within a preset distance from an electronic device; determining a Service Identification Module (SIM) from a plurality of SIMS that are available in the electronic device; and communicating with the reader using information stored in the SIM.