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    ELECTRONIC APPARATUS AND CONTROL METHOD THEREOF
    2.
    发明申请
    ELECTRONIC APPARATUS AND CONTROL METHOD THEREOF 审中-公开

    公开(公告)号：US20170330568A1

    公开(公告)日：2017-11-16

    申请号：US15667747

    申请日：2017-08-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Young-jun RYU ,  Dong-Wan KIM ,  Jae-hyun BAE ,  Ki-hoon SHIN ,  Nam-gook CHO ,  Byeong-seob KO ,  Ki-beom KIM ,  Hee-seob RYU

    IPC: G10L15/22 ,  G06F1/32 ,  H04N5/63 ,  H04N21/422 ,  H04N21/443

    Abstract: Disclosed are a display apparatus and a method of controlling the display apparatus. The display apparatus includes: a signal receiver configured to receive a broadcasting signal; a display configured to display an image based on the received broadcasting signal; a sound receiver configured to receive a sound spoken by a user; a first sound recognizer configured to be supplied with power when the display apparatus is in a standby mode, and determine whether the received sound is a reserved word candidate having a high probability of corresponding to a reserved word; a second sound recognizer configured to be supplied with power when the received sound is determined as the reserved word candidate and to determine whether the received sound is the reserved word; and a controller configured to control the preset operation to be performed when the received sound is determined as the reserved word.

    SEMICONDUCTOR DEVICE
    3.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230189510A1

    公开(公告)日：2023-06-15

    申请号：US17854130

    申请日：2022-06-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jihoon CHANG ,  Dong-Wan KIM ,  Dong-Sik PARK

    IPC: H01L27/108

    CPC classification number: H01L27/10897 ,  H01L27/10814 ,  H01L27/10823

    Abstract: A semiconductor device includes a substrate having an active cell region and an interfacial region adjacent to each other in a first direction, bit lines on the active cell region of the substrate that are spaced apart from each other in a second direction that intersects the first direction, and bit-line pads on the interfacial region of the substrate that are spaced apart from each other in the second direction. Each of the bit lines includes a first bit line and a second bit line that extend in the first direction and are spaced apart from each other in the second direction, a connection part that connects a first end of the first bit line to a second end of the second bit line, and a coupling part that connects one of the bit-line pads to one of the first bit line, the second bit line, and the connection part.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权

    公开(公告)号：US20230039149A1

    公开(公告)日：2023-02-09

    申请号：US17747423

    申请日：2022-05-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Wan KIM ,  Keonhee PARK ,  Dong-Sik PARK ,  Joonsuk PARK ,  Jihoon CHANG ,  Hyeon-Woo JANG

    IPC: H01L27/108 ,  H01L21/3213

    Abstract: Disclosed are semiconductor devices and their fabrication methods. The semiconductor device comprises a substrate including a peripheral block and cell blocks each including a cell center region, a cell edge region, and a cell middle region, and bit lines extending on each cell block in a first direction. The bit lines include center bit lines, middle bit lines, and edge bit lines. The bit line has first and second lateral surfaces opposite to each other in a second direction. The first lateral surface straightly extends along the first direction on the cell center region, the cell middle region, and the cell edge region. The second lateral surface straightly extends along the first direction on the cell center region and the cell edge region, and the second lateral surface extends along a third direction, that intersects the first direction and the second direction, on the cell middle region.

    METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING EDGE CHIP AND RELATED DEVICE
    7.
    发明申请
    METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING EDGE CHIP AND RELATED DEVICE 有权
    形成包括边缘芯片的半导体器件的方法和相关器件

    公开(公告)号：US20170069633A1

    公开(公告)日：2017-03-09

    申请号：US15148405

    申请日：2016-05-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunjung KIM ,  Sohyun PARK ,  Bong-Soo KIM ,  Yoosang HWANG ,  Dong-Wan KIM ,  Junghoon HAN

    IPC: H01L27/108 ,  H01L21/027 ,  H01L49/02 ,  H01L21/3105 ,  H01L21/56 ,  H01L21/311

    CPC classification number: H01L27/10894 ,  H01L21/0274 ,  H01L21/31051 ,  H01L21/31144 ,  H01L21/565 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10852 ,  H01L27/10897 ,  H01L27/11582 ,  H01L28/00 ,  H01L28/60

    Abstract: A method of forming a semiconductor device includes forming a molding layer and a supporter layer on a substrate including an etch stop layer, forming a mask layer on the supporter layer, forming a first edge blocking layer on the mask layer, forming a mask pattern by etching the mask layer, forming a hole, forming a lower electrode in the hole, forming a supporter mask layer on the supporter layer, forming a second edge blocking layer on the supporter mask layer, forming a supporter mask pattern by patterning the supporter mask layer, forming a supporter opening passing through the supporter layer, removing the molding layer, forming a capacitor dielectric layer and an upper electrode on the lower electrode, forming an interlayer insulating layer on the upper electrode, and planarizing the interlayer insulating layer. The hole passes through the supporter layer, the molding layer and the etch stop layer.

    Abstract translation: 一种形成半导体器件的方法包括在包括蚀刻停止层的基底上形成模制层和支撑层，在支撑层上形成掩模层，在掩模层上形成第一边缘阻挡层，通过 蚀刻掩模层，形成孔，在孔中形成下电极，在载体层上形成支持体掩模层，在载体掩模层上形成第二边缘阻挡层，通过图案化载体掩模层形成载体掩模图案 形成穿过支撑层的支撑件开口，去除模制层，在下电极上形成电容器电介质层和上电极，在上电极上形成层间绝缘层，并平坦化层间绝缘层。 孔穿过支撑层，模制层和蚀刻停止层。

    SEMICONDUCTOR DEVICES HAVING THROUGH ELECTRODES AND METHODS FOR FABRICATING THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICES HAVING THROUGH ELECTRODES AND METHODS FOR FABRICATING THE SAME 有权

    公开(公告)号：US20210143086A1

    公开(公告)日：2021-05-13

    申请号：US17152012

    申请日：2021-01-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Wan KIM ,  Jung-Hoon HAN ,  Dong-Sik PARK

    IPC: H01L23/48 ,  H01L23/538 ,  H01L21/768

    Abstract: The semiconductor device includes a substrate including an integrated circuit and a contact that are electrically connected to each other, an insulation layer covering the substrate and including metal lines, and a through electrode electrically connected to the integrated circuit. The insulation layer includes an interlayer dielectric layer on the substrate and an intermetal dielectric layer on the interlayer dielectric layer. The metal lines include a first metal line in the interlayer dielectric layer and electrically connected to the contact, and a plurality of second metal lines in the intermetal dielectric layer and electrically connected to the first metal line and the through electrode. The through electrode includes a top surface higher than a top surface of the contact.

    REFLECTIVE EXTREME ULTRAVIOLET MASK
    9.
    发明申请
    REFLECTIVE EXTREME ULTRAVIOLET MASK 有权
    反射极限超紫外线面膜

    公开(公告)号：US20160154296A1

    公开(公告)日：2016-06-02

    申请号：US14814763

    申请日：2015-07-31

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang-Hyun KIM ,  Dong-Wan KIM ,  Chang-Min PARK ,  In-Sung KIM ,  Dong-Gun LEE

    IPC: G03F1/24

    CPC classification number: G03F1/24

    Abstract: A reflective extreme ultraviolet (EUV) mask includes a mask substrate, a reflecting layer on an upper surface of the mask substrate, and an absorbing layer pattern on an upper surface of the reflecting layer, the absorbing layer pattern having an exposing region and a peripheral region, and the absorbing layer pattern including a grating pattern in the peripheral region to reduce reflectivity of light incident on the peripheral region.

    Abstract translation: 反射型极紫外（EUV）掩模包括掩模基板，掩模基板的上表面上的反射层和反射层的上表面上的吸收层图案，吸收层图案具有曝光区域和周边 区域，并且吸收层图案包括在周边区域中的光栅图案，以减少入射到周边区域的光的反射率。

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210327839A1

    公开(公告)日：2021-10-21

    申请号：US17361588

    申请日：2021-06-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jung-Hoon HAN ,  Dong-Wan KIM ,  Dongho KIM ,  Jaewon SEO

    IPC: H01L23/00 ,  H01L21/66 ,  H01L21/67

    Abstract: A semiconductor device includes a semiconductor substrate including a chip region and an edge region around the chip region, a lower insulating layer on the semiconductor substrate, a chip pad on the lower insulating layer on the chip region, an upper insulating layer provided on the lower insulating layer to cover the chip pad, the upper and different insulating layers including different materials, and a redistribution chip pad on the chip region and connected to the chip pad. The upper insulating layer includes a first portion on the chip region having a first thickness, a second portion on the edge region having a second thickness, and a third portion on the edge region, the third portion extending from the second portion, spaced from the first portion, and having a decreasing thickness away from the second portion. The second thickness is smaller than the first thickness.

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