公开(公告)号：US20160154296A1

公开(公告)日：2016-06-02

申请号：US14814763

申请日：2015-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hyun KIM ,  Dong-Wan KIM ,  Chang-Min PARK ,  In-Sung KIM ,  Dong-Gun LEE

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective extreme ultraviolet (EUV) mask includes a mask substrate, a reflecting layer on an upper surface of the mask substrate, and an absorbing layer pattern on an upper surface of the reflecting layer, the absorbing layer pattern having an exposing region and a peripheral region, and the absorbing layer pattern including a grating pattern in the peripheral region to reduce reflectivity of light incident on the peripheral region.

Abstract translation: 反射型极紫外（EUV）掩模包括掩模基板，掩模基板的上表面上的反射层和反射层的上表面上的吸收层图案，吸收层图案具有曝光区域和周边 区域，并且吸收层图案包括在周边区域中的光栅图案，以减少入射到周边区域的光的反射率。