COMPUTING DEVICE IN A TRUSTED COMPUTING SYSTEM AND ATTESTATION METHOD THEREOF

    公开(公告)号:US20230163976A1

    公开(公告)日:2023-05-25

    申请号:US17859263

    申请日:2022-07-07

    CPC classification number: H04L9/3249 G06F21/44 H04L9/30

    Abstract: A computing device in a trusted computing (TC) system and an attestation method thereof are provided. The computing device includes at least one processor configured to operate as instructed by program code, the program code including: transmission code configured to cause the at least one processor to transmit, to a master controller, a first identification (ID) for a first device selected among a plurality of devices included in the TC system, a second ID for a second device selected among the plurality of devices, and a nonce; and attestation code configured to cause the at least one processor to perform attestation for the first device and the second device based on an aggregated signature, wherein the aggregated signature is based on generation of a first signature, by the first device, by using the nonce, and generation of a second signature, by the second device, by using the first signature.

    SEMICONDUCTOR DEVICE
    2.
    发明公开

    公开(公告)号:US20240130116A1

    公开(公告)日:2024-04-18

    申请号:US18376022

    申请日:2023-10-03

    CPC classification number: H10B12/482 H10B12/02 H10B12/315 H10B12/485

    Abstract: A semiconductor device includes a substrate having an active region; a bit line structure on the substrate and extending in one direction; a bit line contact electrically connecting a first impurity region of the active region and the bit line structure; and a storage node contact disposed on a sidewall of the bit line structure and electrically connected to a second impurity region of the active region, wherein the storage node contact includes a vertical extension portion extending in a vertical direction, perpendicular to an upper surface of the substrate, and a horizontal extension portion integrally connected to the vertical extension portion and extending in a horizontal direction, parallel to the upper surface of the substrate.

    SEMICONDUCTOR DEVICES
    3.
    发明公开

    公开(公告)号:US20230320074A1

    公开(公告)日:2023-10-05

    申请号:US17948796

    申请日:2022-09-20

    CPC classification number: H01L27/10814 H01L29/41725

    Abstract: Provided is a semiconductor device including a conductive contact plug on a substrate, the conductive contact plug including a lower portion and an upper portion on the lower portion, the lower portion having a first width, and the upper portion having a second width less than the first width, a bit line structure on the conductive contact plug, the bit line structure including a conductive structure and an insulation structure provided in a vertical direction perpendicular to an upper surface of the substrate, and a first lower spacer, a second lower spacer, and a third lower spacer sequentially provided on a sidewall of the lower portion of the conductive contact plug in a horizontal direction parallel to the upper surface of the substrate, wherein an uppermost surface of the third lower spacer is higher than an upper surface of the first lower spacer and an upper surface of the second lower spacer.

    SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE SAME

    公开(公告)号:US20230137846A1

    公开(公告)日:2023-05-04

    申请号:US17969966

    申请日:2022-10-20

    Abstract: Provided is a semiconductor device including a substrate including a cell array area and a peripheral circuit area and including a plurality of first active areas defined in the cell array area and at least one second active area defined in the peripheral circuit area; a plurality of bit lines arranged in the cell array area of the substrate and extending in a first direction; a plurality of cell pad structures arranged between the bit lines and each including a first conductive layer, a first intermediate layer, and a first metal layer that are sequentially arranged on a top surface of the first active area; and a peripheral circuit gate electrode disposed on the peripheral circuit area of the substrate and including a second conductive layer, a second intermediate layer, and a second metal layer sequentially arranged on the at least one second active area.

    AUTHORITY AUTHENTICATION SYSTEM FOR ELECTRONIC DEVICE AND METHOD OF OPERATING SAME

    公开(公告)号:US20250119304A1

    公开(公告)日:2025-04-10

    申请号:US18626779

    申请日:2024-04-04

    Inventor: Sohyun PARK

    Abstract: An authority authentication system includes an electronic device configured to generate a first unique asymmetric key pair, including a first public key and a first private key, a certificate authority server configured to generate a unique asymmetric key certificate and a unique certificate chain, and inject the unique certificate chain into the electronic device, at least one owner terminal device configured to request authority authentication from the electronic device based on at least one owner certificates and at least one owner key pair corresponding to the at least one owner terminal device, the at least one owner key pair including at least one public owner key and at least one private owner key, a communication network including a secure communication channel configured to transmit and receive the at least one owner certificate and the at least one public owner key.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20250031363A1

    公开(公告)日:2025-01-23

    申请号:US18413813

    申请日:2024-01-16

    Abstract: A semiconductor device includes a first active pattern including a first edge portion and a second edge portion spaced apart from the first edge portion in a first direction, a first word line between the first edge portion and the second edge portion and extending in a second direction intersecting the first direction, a bit line on the first edge portion and extending in a third direction intersecting the first direction and the second direction, and a storage node contact on the second edge portion, where the first edge portion includes a first top surface and a second top surface, and the second top surface of the first edge portion is closer to the second edge portion than the first top surface of the first edge portion.

    ELECTRONIC APPARATUS AND METHOD FOR CONTROLLING THEREOF

    公开(公告)号:US20230351126A1

    公开(公告)日:2023-11-02

    申请号:US18221190

    申请日:2023-07-12

    CPC classification number: G06F40/58

    Abstract: Provided is an electronic apparatus that includes a microphone; a communication interface; a memory storing information on a first encoder, a first decoder, a first interpretation model comprising a first version conversion module, and at least one first version which the first conversion module may convert; and a processor. The processor is configured to communicate with an external device and receive information about at least one second version corresponding to a second interpretation model in the external device; obtain information on a compatible version based the at least one first version and the least one second version; based on a user voice, obtain a first feature vector corresponding to the user voice using the first encoder, convert the first feature vector to a second feature vector corresponding to the compatible version, and transmit the second feature vector to the external device.

    SEMICONDUCTOR DEVICE
    9.
    发明公开

    公开(公告)号:US20230247822A1

    公开(公告)日:2023-08-03

    申请号:US18072885

    申请日:2022-12-01

    CPC classification number: H01L27/10805

    Abstract: A semiconductor device includes a substrate having an active area and a non-active area. An extra pad layer is disposed on the active area of the substrate. A first contact layer is disposed in a contact hole defined inside the substrate from a surface of the extra pad layer. A first silicide layer is disposed on both sidewalls of the first contact layer. A buried insulating layer is buried in the contact hole at lateral sides of the first contact layer and the first silicide layer. A second silicide layer is disposed on an upper surface and sidewalls of the extra pad layer. A second contact layer is on the buried insulating layer and the second silicide layer and is in direct contact with the second silicide layer.

    ELECTRONIC DEVICE AND CONTROL METHOD THEREOF
    10.
    发明公开

    公开(公告)号:US20230197059A1

    公开(公告)日:2023-06-22

    申请号:US18105011

    申请日:2023-02-02

    CPC classification number: G10L13/086 G10L15/02 G10L15/26 G10L15/005

    Abstract: An electronic apparatus includes: a microphone; a communication interface including communication circuitry; a memory configured to store a first encoder corresponding to a first language and a first decoder corresponding to the first language; and a processor configured to: based on a user voice in the first language being received through the microphone, acquire text in the first language corresponding to the user voice, acquire a first feature vector by inputting the text in the first language to the first encoder, control the communication interface to transmit the first feature vector to an external device, and based on a second feature vector being received from the external device through the communication interface, acquire text in the first language corresponding to the second feature vector by inputting the second feature vector to the first decoder.

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