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公开(公告)号：US12111680B2
公开(公告)日：2024-10-08
申请号：US17871374
申请日：2022-07-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dae Hyun Kwon , Min-Hyeong Kim , Wang Soo Kim
CPC classification number: G06F1/08 , H04L25/03057
Abstract: A memory device including a receiving circuit is provided. The receiving circuit of the memory device includes a first path receiving a received signal and outputting the received signal directly as a first corrected signal in a current clock signal, a second path holding or tracking the received signal and outputting a second corrected signal in the current clock signal, wherein the second corrected signal is held in a previous clock signal, a summing circuit summing the first corrected signal and the second corrected signal and outputting a summed received signal, and a decision feedback equalizer comparing the summed received signal with a reference signal to decide equalized data and outputting the equalized data in the current clock signal.
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公开(公告)号：US10008984B2
公开(公告)日：2018-06-26
申请号：US15419668
申请日：2017-01-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Siddharth Seth , Sang Won Son , Dae Hyun Kwon , Sriramkumar Venugopalan , Thomas Cho
CPC classification number: H03F1/0233 , H03F1/0222 , H03F3/193 , H03F3/245 , H03F3/45179 , H03F3/45183 , H03F3/45197 , H03F2200/102 , H03F2200/153 , H03F2200/381 , H03F2200/451 , H03F2200/462 , H03F2200/546 , H03F2200/91 , H03F2203/30036 , H03F2203/45112 , H04B1/04 , H04B2001/0416
Abstract: An amplifier circuit is provided. The amplifier circuit includes an amplifier stage; a plurality of variable transistors connected to the amplifier stage; a transconductor connected to at least one of the plurality of variable transistors; and a hybrid differential envelope detector and full-wave rectifier connected to the transconductor.
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公开(公告)号：US09960795B1
公开(公告)日：2018-05-01
申请号：US15584116
申请日：2017-05-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Qing Liu , Dae Hyun Kwon , Hui Changhsiang
CPC classification number: H04B1/0475 , H03F3/19 , H03F3/245 , H03F2200/165 , H03F2200/333 , H03F2200/411 , H03F2200/451 , H04B2001/0408 , H04W84/042
Abstract: Provided are a semiconductor device and an operating method thereof. A semiconductor device includes a mixer configured to upconvert a baseband signal using a local oscillator (LO) signal; and a notch filter configured to receive the upconverted signal from the mixer and filter notch frequency components, the notch filter further configured to resonate at a fundamental frequency to provide a higher impedance and resonate at a notch frequency different from the fundamental frequency to provide a lower impedance.
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公开(公告)号：US09559646B2
公开(公告)日：2017-01-31
申请号：US14819088
申请日：2015-08-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Siddharth Seth , Sang Won Son , Dae Hyun Kwon , Sriramkumar Venugopalan , Thomas Cho
CPC classification number: H03F1/0233 , H03F1/0222 , H03F3/193 , H03F3/245 , H03F3/45179 , H03F3/45183 , H03F3/45197 , H03F2200/102 , H03F2200/153 , H03F2200/381 , H03F2200/451 , H03F2200/462 , H03F2200/546 , H03F2200/91 , H03F2203/30036 , H03F2203/45112 , H04B1/04 , H04B2001/0416
Abstract: A dynamically biased baseband current amplifier is provided. The dynamically biased baseband current amplifier includes an input interface; a controller; a variable resistor network; an amplifier stage; a hybrid differential envelope detector and full-wave rectifier; a transconductor; a first variable transistor; a second variable transistor; a third variable transistor; and a fourth variable transistor.
Abstract translation: 提供了一种动态偏置的基带电流放大器。 动态偏置的基带电流放大器包括输入接口; 控制器 可变电阻网络; 放大器级; 混合差分包络检波器和全波整流器; 跨导体 第一可变晶体管; 第二可变晶体管; 第三可变晶体管; 和第四可变晶体管。
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