公开(公告)号：US20190051566A1

公开(公告)日：2019-02-14

申请号：US16162428

申请日：2018-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Ji-Su Kang ,  Byung-Chan Ryu ,  Jae-Hyun Park ,  Yu-Ri Lee ,  Dong-Ho Cha

IPC: H01L21/8238 ,  H01L29/16 ,  H01L29/78 ,  H01L29/165 ,  H01L29/161 ,  H01L29/08 ,  H01L27/092

Abstract: A semiconductor device includes a first fin-type pattern and a second fin-type pattern which protrude upwardly from an upper surface of a field insulating film and extend in a first direction. A gate structure intersects the first fin-type pattern and the second fin-type pattern. A first epitaxial layer is on the first fin-type pattern on at least one side of the gate structure, and a second epitaxial layer is on the second fin-type pattern on at least one side of the gate structure. A metal contact covers outer circumferential surfaces of the first epitaxial layer and the second epitaxial layer. The first epitaxial layer contacts the second epitaxial layer.

公开(公告)号：US10593671B2

公开(公告)日：2020-03-17

申请号：US16013734

申请日：2018-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Deok-Han Bae ,  Sang-Young Kim ,  Byung-Chan Ryu ,  Jong-Ho You ,  Da-Un Jeon

IPC: H01L27/088 ,  H01L27/02 ,  H01L29/08 ,  H01L29/417 ,  H01L29/06 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/768 ,  H01L21/762 ,  H01L29/78 ,  H01L21/311 ,  H01L29/165 ,  H01L21/306

Abstract: An integrated circuit device includes a substrate having a fin-type active region that extends in a first direction, a gate structure that intersects the fin-type active region on the substrate and extends in a second direction perpendicular to the first direction and parallel to an upper surface of the substrate, a guide pattern that extends on the gate structure in the second direction and has an inclined side surface that extends in the second direction, source/drain regions disposed on both sides of the gate structure, and a first contact that is electrically connected to one of the source/drain regions and in which an upper portion contacts the inclined side surface of the guide pattern. The width of an upper portion of the guide pattern in the first direction is less than the width of a lower portion of the guide pattern in the first direction.

公开(公告)号：US10147650B2

公开(公告)日：2018-12-04

申请号：US15211200

申请日：2016-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Ji-Su Kang ,  Byung-Chan Ryu ,  Jae-Hyun Park ,  Yu-Ri Lee ,  Dong-Ho Cha

IPC: H01L21/70 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L27/092

Abstract: A semiconductor device includes a first fin-type pattern and a second fin-type pattern which protrude upwardly from an upper surface of a field insulating film and extend in a first direction. A gate structure intersects the first fin-type pattern and the second fin-type pattern. A first epitaxial layer is on the first fin-type pattern on at least one side of the gate structure, and a second epitaxial layer is on the second fin-type pattern on at least one side of the gate structure. A metal contact covers outer circumferential surfaces of the first epitaxial layer and the second epitaxial layer. The first epitaxial layer contacts the second epitaxial layer.